Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
GPA040A120L-ND Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 80A 455W TO264 Manufacturer: Global Power Technologies Group Series: - IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A Power - Max: 455W Switching Energy: 5.8mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 510nC Td (on/off) @ 25°C: 41ns/200ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 220ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock6,696
GPA040A120MN-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 80A 480W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 480W Switching Energy: 5.3mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 480nC Td (on/off) @ 25°C: 55ns/200ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	In Stock8,028
GPA042A100L-ND Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1000V 60A 463W TO264 Manufacturer: Global Power Technologies Group Series: - IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Power - Max: 463W Switching Energy: 13.1mJ (on), 6.3mJ (off) Input Type: Standard Gate Charge: 405nC Td (on/off) @ 25°C: 230ns/1480ns Test Condition: 600V, 60A, 50Ohm, 15V Reverse Recovery Time (trr): 465ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock7,812
GPA060A060MN-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 600V 120A 347W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 347W Switching Energy: 2.66mJ (on), 1.53mJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: 45ns/150ns Test Condition: 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	In Stock7,254
GPI040A060MN-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 600V 80A 231W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 231W Switching Energy: 1.46mJ (on), 540µJ (off) Input Type: Standard Gate Charge: 173nC Td (on/off) @ 25°C: 35ns/85ns Test Condition: 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	In Stock2,466
GT10G131(TE12L,Q) Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 400V 1W 8-SOIC Manufacturer: Toshiba Semiconductor and Storage Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A Power - Max: 1W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 3.1µs/2µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	In Stock6,030
GT10J312(Q) Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 600V 10A 60W TO220SM Manufacturer: Toshiba Semiconductor and Storage Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 60W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 400ns/400ns Test Condition: 300V, 10A, 100Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-220SM	In Stock7,830
GT50J121(Q) Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 600V 50A 240W TO3P LH Manufacturer: Toshiba Semiconductor and Storage Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A Power - Max: 240W Switching Energy: 1.3mJ (on), 1.34mJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 90ns/300ns Test Condition: 300V, 50A, 13Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(LH)	In Stock2,448
GT60N321(Q) Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 1000V 60A 170W TO3P LH Manufacturer: Toshiba Semiconductor and Storage Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A Power - Max: 170W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 330ns/700ns Test Condition: - Reverse Recovery Time (trr): 2.5µs Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(LH)	In Stock7,254
GT8G133(TE12L,Q) Toshiba Semiconductor and Storage	Transistors - IGBTs - Single IGBT 400V 600MW 8TSSOP Manufacturer: Toshiba Semiconductor and Storage Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A Power - Max: 600mW Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 1.7µs/2µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	In Stock4,896
HGT1S10N120BNS ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 35A 298W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 298W Switching Energy: 320µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/165ns Test Condition: 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock8,172
HGT1S10N120BNST ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 35A 298W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 298W Switching Energy: 320µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/165ns Test Condition: 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock20,412
HGT1S12N60A4DS ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 54A 167W D2PAK Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock2,916
HGT1S12N60A4S9A ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 54A 167W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock5,904
HGT1S14N36G3VLS ON Semiconductor	Transistors - IGBTs - Single IGBT 390V 18A 100W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 5V, 14A Power - Max: 100W Switching Energy: - Input Type: Logic Gate Charge: 24nC Td (on/off) @ 25°C: -/7µs Test Condition: 300V, 7A, 25Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock7,362
HGT1S14N36G3VLT ON Semiconductor	Transistors - IGBTs - Single IGBT 390V 18A 100W TO262AA Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 390V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 5V, 14A Power - Max: 100W Switching Energy: - Input Type: Logic Gate Charge: 24nC Td (on/off) @ 25°C: -/7µs Test Condition: 300V, 7A, 25Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262)	In Stock7,092
HGT1S20N35G3VLS ON Semiconductor	Transistors - IGBTs - Single IGBT 380V 20A 150W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 375V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.8V @ 5V, 20A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: 28.7nC Td (on/off) @ 25°C: -/15µs Test Condition: 300V, 10A, 25Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock4,212
HGT1S20N36G3VL ON Semiconductor	Transistors - IGBTs - Single IGBT 395V 37.7A 150W TO262AA Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 395V Current - Collector (Ic) (Max): 37.7A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.9V @ 5V, 20A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: 28.7nC Td (on/off) @ 25°C: -/15µs Test Condition: 300V, 10A, 25Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK (TO-262)	In Stock6,120
HGT1S20N60A4S9A ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 70A 290W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 105µJ (on), 150µJ (off) Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: 15ns/73ns Test Condition: 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock4,104
HGT1S20N60C3S9A ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 45A 164W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Power - Max: 164W Switching Energy: 295µJ (on), 500µJ (off) Input Type: Standard Gate Charge: 91nC Td (on/off) @ 25°C: 28ns/151ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock21,156
HGT1S2N120CN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 13A 104W I2PAK Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A Power - Max: 104W Switching Energy: 96µJ (on), 355µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 25ns/205ns Test Condition: 960V, 2.6A, 51Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock6,606
HGT1S3N60A4DS9A ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 17A 70W D2PAK Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Power - Max: 70W Switching Energy: 37µJ (on), 25µJ (off) Input Type: Standard Gate Charge: 21nC Td (on/off) @ 25°C: 6ns/73ns Test Condition: 390V, 3A, 50Ohm, 15V Reverse Recovery Time (trr): 29ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock6,930
HGT1S7N60A4DS ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 34A 125W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 55µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock3,492
HGT1S7N60C3DS ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 14A 60W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Power - Max: 60W Switching Energy: 165µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: - Test Condition: 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock3,204
HGT1S7N60C3DS9A ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 14A 60W TO263AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Power - Max: 60W Switching Energy: 165µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: - Test Condition: 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	In Stock8,316
HGTD1N120BNS9A ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 5.3A 60W TO252AA Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 5.3A Current - Collector Pulsed (Icm): 6A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A Power - Max: 60W Switching Energy: 70µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 14nC Td (on/off) @ 25°C: 15ns/67ns Test Condition: 960V, 1A, 82Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	In Stock47,598
HGTD3N60C3S9A ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 6A 33W TO252AA Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 6A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A Power - Max: 33W Switching Energy: 85µJ (on), 245µJ (off) Input Type: Standard Gate Charge: 10.8nC Td (on/off) @ 25°C: - Test Condition: 480V, 3A, 82Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	In Stock5,292
HGTD7N60C3S9A ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 14A 60W TO252AA Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Power - Max: 60W Switching Energy: 165µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	In Stock6,408
HGTG10N120BND ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 35A 298W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 298W Switching Energy: 850µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/165ns Test Condition: 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock15,480
HGTG11N120CN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 43A 298W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A Power - Max: 298W Switching Energy: 400µJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/180ns Test Condition: 960V, 11A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,110

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