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HGTD3N60C3S9A

HGTD3N60C3S9A

For Reference Only

Part Number HGTD3N60C3S9A
PNEDA Part # HGTD3N60C3S9A
Description IGBT 600V 6A 33W TO252AA
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTD3N60C3S9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTD3N60C3S9A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTD3N60C3S9A, HGTD3N60C3S9A Datasheet (Total Pages: 7, Size: 263.04 KB)
PDFHGTD3N60C3S9A Datasheet Cover
HGTD3N60C3S9A Datasheet Page 2 HGTD3N60C3S9A Datasheet Page 3 HGTD3N60C3S9A Datasheet Page 4 HGTD3N60C3S9A Datasheet Page 5 HGTD3N60C3S9A Datasheet Page 6 HGTD3N60C3S9A Datasheet Page 7

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HGTD3N60C3S9A Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)6A
Current - Collector Pulsed (Icm)24A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 3A
Power - Max33W
Switching Energy85µJ (on), 245µJ (off)
Input TypeStandard
Gate Charge10.8nC
Td (on/off) @ 25°C-
Test Condition480V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

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