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HGT1S20N60C3S9A

HGT1S20N60C3S9A

For Reference Only

Part Number HGT1S20N60C3S9A
PNEDA Part # HGT1S20N60C3S9A
Description IGBT 600V 45A 164W TO263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 21,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S20N60C3S9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S20N60C3S9A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S20N60C3S9A, HGT1S20N60C3S9A Datasheet (Total Pages: 10, Size: 262.6 KB)
PDFHGT1S20N60C3S9A Datasheet Cover
HGT1S20N60C3S9A Datasheet Page 2 HGT1S20N60C3S9A Datasheet Page 3 HGT1S20N60C3S9A Datasheet Page 4 HGT1S20N60C3S9A Datasheet Page 5 HGT1S20N60C3S9A Datasheet Page 6 HGT1S20N60C3S9A Datasheet Page 7 HGT1S20N60C3S9A Datasheet Page 8 HGT1S20N60C3S9A Datasheet Page 9 HGT1S20N60C3S9A Datasheet Page 10

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HGT1S20N60C3S9A Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)45A
Current - Collector Pulsed (Icm)300A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 20A
Power - Max164W
Switching Energy295µJ (on), 500µJ (off)
Input TypeStandard
Gate Charge91nC
Td (on/off) @ 25°C28ns/151ns
Test Condition480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Vce(on) (Max) @ Vge, Ic

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