HGT1S12N60A4S9A
For Reference Only
| Part Number | HGT1S12N60A4S9A |
| PNEDA Part # | HGT1S12N60A4S9A |
| Description | IGBT 600V 54A 167W TO263AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,904 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HGT1S12N60A4S9A Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | HGT1S12N60A4S9A |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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HGT1S12N60A4S9A Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 54A |
| Current - Collector Pulsed (Icm) | 96A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Power - Max | 167W |
| Switching Energy | 55µJ (on), 50µJ (off) |
| Input Type | Standard |
| Gate Charge | 78nC |
| Td (on/off) @ 25°C | 17ns/96ns |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
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Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 240A Current - Collector Pulsed (Icm) 700A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 120A Power - Max 1500W Switching Energy 6.75mJ (on), 5.1mJ (off) Input Type Standard Gate Charge 412nC Td (on/off) @ 25°C 35ns/176ns Test Condition 600V, 100A, 1Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 (IXYK) |
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