Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2046/2164

Part Number	Description	In Stock
HGTP3N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 17A 70W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Power - Max: 70W Switching Energy: 37µJ (on), 25µJ (off) Input Type: Standard Gate Charge: 21nC Td (on/off) @ 25°C: 6ns/73ns Test Condition: 390V, 3A, 50Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock6,678
HGTP3N60A4D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 17A 70W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 17A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Power - Max: 70W Switching Energy: 37µJ (on), 25µJ (off) Input Type: Standard Gate Charge: 21nC Td (on/off) @ 25°C: 6ns/73ns Test Condition: 390V, 3A, 50Ohm, 15V Reverse Recovery Time (trr): 29ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock5,652
HGTP5N120BND ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 21A 167W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A Power - Max: 167W Switching Energy: 450µJ (on), 390µJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 22ns/160ns Test Condition: 960V, 5A, 25Ohm, 15V Reverse Recovery Time (trr): 65ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock8,424
HGTP7N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 34A 125W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 55µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock19,140
HGTP7N60A4D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 34A 125W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 55µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock2,268
HGTP7N60A4-F102 ON Semiconductor	Transistors - IGBTs - Single N-CH / 7A 600V SMPS 1 IGBT Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 55µJ (on), 150µJ (off) Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock8,298
HGTP7N60B3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 14A 60W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Power - Max: 60W Switching Energy: 160µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock6,930
HGTP7N60C3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 14A 60W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Power - Max: 60W Switching Energy: 165µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: - Test Condition: 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock6,192
IEWS20R5135IPBXKMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT PWR MOD 20A 1350V TO247-6 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A Power - Max: 288W Switching Energy: 1.21mJ (off) Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: 668ns/2034ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-6 Supplier Device Package: PG-TO247-6	In Stock6,372
IGA03N120H2XKSA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 3A 29W TO220-3 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 3A Current - Collector Pulsed (Icm): 9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 29W Switching Energy: 290µJ Input Type: Standard Gate Charge: 8.6nC Td (on/off) @ 25°C: 9.2ns/281ns Test Condition: 800V, 3A, 82Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3	In Stock6,084
IGA30N60H3XKSA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 18A 43W TO220-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 18A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 43W Switching Energy: 1.17mJ Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 18ns/207ns Test Condition: 400V, 30A, 10.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: PG-TO220-3-31 Full Pack	In Stock5,958
IGB01N120H2ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 3.2A 28W TO263-3-2 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 3.2A Current - Collector Pulsed (Icm): 3.5A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A Power - Max: 28W Switching Energy: 140µJ Input Type: Standard Gate Charge: 8.6nC Td (on/off) @ 25°C: 13ns/370ns Test Condition: 800V, 1A, 241Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	In Stock4,194
IGB03N120H2ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 9.6A 62.5W TO263-3 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9.6A Current - Collector Pulsed (Icm): 9.9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 62.5W Switching Energy: 290µJ Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25°C: 9.2ns/281ns Test Condition: 800V, 3A, 82Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock5,256
IGB10N60TATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 20A 110W TO263-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Power - Max: 110W Switching Energy: 430µJ Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 12ns/215ns Test Condition: 400V, 10A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	In Stock21,456
IGB15N60TATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 30A 130W TO263-3-2 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Power - Max: 130W Switching Energy: 570µJ Input Type: Standard Gate Charge: 87nC Td (on/off) @ 25°C: 17ns/188ns Test Condition: 400V, 15A, 15Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	In Stock4,212
IGB15N65S5ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT PRODUCTS Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,060
IGB20N60H3ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 40A 170W TO263-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 170W Switching Energy: 690µJ Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 16ns/194ns Test Condition: 400V, 20A, 14.6Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263AB)	In Stock13,530
IGB20N65S5ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT PRODUCTS Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,232
IGB30N60H3ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 60A 187W TO263-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 187W Switching Energy: 1.17mJ Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 18ns/207ns Test Condition: 400V, 30A, 10.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock12,756
IGB30N60TATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 60A 187W TO263-3-2 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Power - Max: 187W Switching Energy: 1.46mJ Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25°C: 23ns/254ns Test Condition: 400V, 30A, 10.6Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	In Stock5,256
IGB50N60TATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 100A 333W TO263-3 Manufacturer: Infineon Technologies Series: TrenchStop® IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333W Switching Energy: 2.6mJ Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	In Stock2,872
IGB50N65H5ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT PRODUCTS Manufacturer: Infineon Technologies Series: TrenchStop™ 5 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 270W Switching Energy: 1.59mJ (on), 750µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 23ns/173ns Test Condition: 400V, 50A, 12Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock13,050
IGB50N65S5ATMA1 Infineon Technologies	Transistors - IGBTs - Single IGBT PRODUCTS Manufacturer: Infineon Technologies Series: TrenchStop™ 5 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Power - Max: 270W Switching Energy: 1.23mJ (on), 740µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 20ns/139ns Test Condition: 400V, 50A, 8.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	In Stock6,444
IGC07T120T8LX1SA2 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 4A SAWN ON FOIL Manufacturer: Infineon Technologies Series: TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock8,874
IGC11T120T8LX1SA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 8A SAWN ON FOIL Manufacturer: Infineon Technologies Series: TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,142
IGC13T120T8LX1SA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 10A SAWN ON FOIL Manufacturer: Infineon Technologies Series: TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock8,172
IGC18T120T8LX1SA2 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A SAWN ON FOIL Manufacturer: Infineon Technologies Series: TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock8,298
IGC18T120T8QX1SA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A DIE Manufacturer: Infineon Technologies Series: TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,978
IGC27T120T8LX1SA2 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 25A DIE Manufacturer: Infineon Technologies Series: TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock8,694
IGC27T120T8QX1SA1 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 25A DIE Manufacturer: Infineon Technologies Series: TrenchStop™ IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,760

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