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HGTG10N120BND

HGTG10N120BND

For Reference Only

Part Number HGTG10N120BND
PNEDA Part # HGTG10N120BND
Description IGBT 1200V 35A 298W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 15,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 1 - Apr 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTG10N120BND Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTG10N120BND
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTG10N120BND, HGTG10N120BND Datasheet (Total Pages: 10, Size: 230.65 KB)
PDFHGTG10N120BND Datasheet Cover
HGTG10N120BND Datasheet Page 2 HGTG10N120BND Datasheet Page 3 HGTG10N120BND Datasheet Page 4 HGTG10N120BND Datasheet Page 5 HGTG10N120BND Datasheet Page 6 HGTG10N120BND Datasheet Page 7 HGTG10N120BND Datasheet Page 8 HGTG10N120BND Datasheet Page 9 HGTG10N120BND Datasheet Page 10

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HGTG10N120BND Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)35A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298W
Switching Energy850µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)70ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

115nC

Td (on/off) @ 25°C

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Test Condition

480V, 30A, 5Ohm, 15V

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-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power - Max

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Switching Energy

310µJ (on), 3.28mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Power - Max

167W

Switching Energy

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Input Type

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Gate Charge

115nC

Td (on/off) @ 25°C

42.5ns/177ns

Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

90ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 20A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

TO-247AD (IXGH)

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