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HGT1S2N120CN

HGT1S2N120CN

For Reference Only

Part Number HGT1S2N120CN
PNEDA Part # HGT1S2N120CN
Description IGBT 1200V 13A 104W I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S2N120CN Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S2N120CN
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S2N120CN, HGT1S2N120CN Datasheet (Total Pages: 9, Size: 498.55 KB)
PDFHGT1S2N120CN Datasheet Cover
HGT1S2N120CN Datasheet Page 2 HGT1S2N120CN Datasheet Page 3 HGT1S2N120CN Datasheet Page 4 HGT1S2N120CN Datasheet Page 5 HGT1S2N120CN Datasheet Page 6 HGT1S2N120CN Datasheet Page 7 HGT1S2N120CN Datasheet Page 8 HGT1S2N120CN Datasheet Page 9

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HGT1S2N120CN Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)13A
Current - Collector Pulsed (Icm)20A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A
Power - Max104W
Switching Energy96µJ (on), 355µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C25ns/205ns
Test Condition960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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