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GT10J312(Q)

GT10J312(Q)

For Reference Only

Part Number GT10J312(Q)
PNEDA Part # GT10J312-Q
Description IGBT 600V 10A 60W TO220SM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,830
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GT10J312(Q) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberGT10J312(Q)
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
GT10J312(Q), GT10J312(Q) Datasheet (Total Pages: 7, Size: 509.49 KB)
PDFGT10J312(Q) Datasheet Cover
GT10J312(Q) Datasheet Page 2 GT10J312(Q) Datasheet Page 3 GT10J312(Q) Datasheet Page 4 GT10J312(Q) Datasheet Page 5 GT10J312(Q) Datasheet Page 6 GT10J312(Q) Datasheet Page 7

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GT10J312(Q) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)10A
Current - Collector Pulsed (Icm)20A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max60W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C400ns/400ns
Test Condition300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-220SM

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