Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2045/2164

Part Number	Description	In Stock
HGTG11N120CND ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 43A 298W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A Power - Max: 298W Switching Energy: 950µJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/180ns Test Condition: 960V, 11A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock8,208
HGTG12N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 54A 167W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock3,222
HGTG12N60A4D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 54A 167W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,284
HGTG12N60B3 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 27A 104W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 27A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Power - Max: 104W Switching Energy: 150µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 26ns/150ns Test Condition: 480V, 12A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock4,500
HGTG12N60C3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 24A 104W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 104W Switching Energy: 380µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 42ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock16,686
HGTG18N120BN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 54A 390W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 165A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A Power - Max: 390W Switching Energy: 800µJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 23ns/170ns Test Condition: 960V, 18A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock4,104
HGTG18N120BND ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 54A 390W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A Power - Max: 390W Switching Energy: 1.9mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 23ns/170ns Test Condition: 960V, 18A, 3Ohm, 15V Reverse Recovery Time (trr): 75ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock19,692
HGTG20N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 70A 290W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 105µJ (on), 150µJ (off) Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: 15ns/73ns Test Condition: 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,816
HGTG20N60A4D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 70A 290W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 105µJ (on), 150µJ (off) Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: 15ns/73ns Test Condition: 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr): 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock11,568
HGTG20N60B3 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 40A 165W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 165W Switching Energy: 475µJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: - Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock9,600
HGTG20N60B3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 40A 165W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 165W Switching Energy: 475µJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 55ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock18,816
HGTG20N60C3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 45A 164W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Power - Max: 164W Switching Energy: 500µJ (on), 500µJ (off) Input Type: Standard Gate Charge: 91nC Td (on/off) @ 25°C: 28ns/151ns Test Condition: 480V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock8,064
HGTG27N120BN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 72A 500W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 72A Current - Collector Pulsed (Icm): 216A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 27A Power - Max: 500W Switching Energy: 2.2mJ (on), 2.3mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25°C: 24ns/195ns Test Condition: 960V, 27A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,732
HGTG30N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 75A 463W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Power - Max: 463W Switching Energy: 280µJ (on), 240µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: 25ns/150ns Test Condition: 390V, 30A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock40,266
HGTG30N60A4D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 75A 463W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Power - Max: 463W Switching Energy: 280µJ (on), 240µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: 25ns/150ns Test Condition: 390V, 30A, 3Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock23,646
HGTG30N60B3 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 60A 208W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 208W Switching Energy: 500µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 36ns/137ns Test Condition: 480V, 30A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,920
HGTG30N60B3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 60A 208W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 208W Switching Energy: 550µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 36ns/137ns Test Condition: 480V, 30A, 3Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock16,914
HGTG30N60C3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 63A 208W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 63A Current - Collector Pulsed (Icm): 252A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 208W Switching Energy: 1.05mJ (on), 2.5mJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock16,188
HGTG40N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 75A 625W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 625W Switching Energy: 400µJ (on), 370µJ (off) Input Type: Standard Gate Charge: 350nC Td (on/off) @ 25°C: 25ns/145ns Test Condition: 390V, 40A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock8,244
HGTG40N60B3 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 70A 290W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 330A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 290W Switching Energy: 1.05mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 250nC Td (on/off) @ 25°C: 47ns/170ns Test Condition: 480V, 40A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,596
HGTG5N120BND ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 21A 167W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A Power - Max: 167W Switching Energy: 450µJ (on), 390µJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 22ns/160ns Test Condition: 960V, 5A, 25Ohm, 15V Reverse Recovery Time (trr): 65ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,372
HGTG7N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 34A 125W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 55µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock4,284
HGTG7N60A4D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 34A 125W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 55µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr): 34ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,768
HGTP10N120BN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 35A 298W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Power - Max: 298W Switching Energy: 320µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 23ns/165ns Test Condition: 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock3,168
HGTP12N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 54A 167W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock5,598
HGTP12N60A4D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 54A 167W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 50µJ (off) Input Type: Standard Gate Charge: 78nC Td (on/off) @ 25°C: 17ns/96ns Test Condition: 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock11,544
HGTP12N60C3 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 24A 104W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A Power - Max: 104W Switching Energy: 380µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock4,032
HGTP12N60C3D ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 24A 104W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 104W Switching Energy: 380µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock3,222
HGTP20N60A4 ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 70A 290W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 105µJ (on), 150µJ (off) Input Type: Standard Gate Charge: 142nC Td (on/off) @ 25°C: 15ns/73ns Test Condition: 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock17,676
HGTP2N120CN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 13A 104W TO220AB Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 20A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A Power - Max: 104W Switching Energy: 96µJ (on), 355µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 25ns/205ns Test Condition: 960V, 2.6A, 51Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock4,428

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