Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

HGT1S7N60C3DS9A

HGT1S7N60C3DS9A

For Reference Only

Part Number HGT1S7N60C3DS9A
PNEDA Part # HGT1S7N60C3DS9A
Description IGBT 600V 14A 60W TO263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S7N60C3DS9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S7N60C3DS9A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S7N60C3DS9A, HGT1S7N60C3DS9A Datasheet (Total Pages: 9, Size: 557.88 KB)
PDFHGTP7N60C3D Datasheet Cover
HGTP7N60C3D Datasheet Page 2 HGTP7N60C3D Datasheet Page 3 HGTP7N60C3D Datasheet Page 4 HGTP7N60C3D Datasheet Page 5 HGTP7N60C3D Datasheet Page 6 HGTP7N60C3D Datasheet Page 7 HGTP7N60C3D Datasheet Page 8 HGTP7N60C3D Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • HGT1S7N60C3DS9A Datasheet
  • where to find HGT1S7N60C3DS9A
  • ON Semiconductor

  • ON Semiconductor HGT1S7N60C3DS9A
  • HGT1S7N60C3DS9A PDF Datasheet
  • HGT1S7N60C3DS9A Stock

  • HGT1S7N60C3DS9A Pinout
  • Datasheet HGT1S7N60C3DS9A
  • HGT1S7N60C3DS9A Supplier

  • ON Semiconductor Distributor
  • HGT1S7N60C3DS9A Price
  • HGT1S7N60C3DS9A Distributor

HGT1S7N60C3DS9A Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)14A
Current - Collector Pulsed (Icm)56A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 7A
Power - Max60W
Switching Energy165µJ (on), 600µJ (off)
Input TypeStandard
Gate Charge23nC
Td (on/off) @ 25°C-
Test Condition480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr)37ns
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

The Products You May Be Interested In

IXBX64N250

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

2500V

Current - Collector (Ic) (Max)

156A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 64A

Power - Max

735W

Switching Energy

-

Input Type

Standard

Gate Charge

400nC

Td (on/off) @ 25°C

49ns/232ns

Test Condition

1250V, 128A, 1Ohm, 15V

Reverse Recovery Time (trr)

160ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

IRG4RC10STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power - Max

38W

Switching Energy

140µJ (on), 2.58mJ (off)

Input Type

Standard

Gate Charge

15nC

Td (on/off) @ 25°C

25ns/630ns

Test Condition

480V, 8A, 100Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

D-Pak

IRG7PH42UD2-EP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2.02V @ 15V, 30A

Power - Max

321W

Switching Energy

1.32mJ (off)

Input Type

Standard

Gate Charge

234nC

Td (on/off) @ 25°C

-/233ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

STGB19NC60KDT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

35A

Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 12A

Power - Max

125W

Switching Energy

165µJ (on), 255µJ (off)

Input Type

Standard

Gate Charge

55nC

Td (on/off) @ 25°C

30ns/105ns

Test Condition

480V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

31ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 36A

Power - Max

600W

Switching Energy

720µJ (on), 330µJ (off)

Input Type

Standard

Gate Charge

64nC

Td (on/off) @ 25°C

24ns/62ns

Test Condition

360V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXXH)

Recently Sold

2SA1037AKT146R

2SA1037AKT146R

Rohm Semiconductor

TRANS PNP 50V 0.15A SOT-346

SRR0735A-100M

SRR0735A-100M

Bourns

FIXED IND 10UH 2.1A 72 MOHM SMD

FXMA2102UMX

FXMA2102UMX

ON Semiconductor

IC TRNSLTR BIDIRECTIONAL 8MLP

NC7SB3157P6X

NC7SB3157P6X

ON Semiconductor

IC SWITCH SPDT SC70-6

MAX1686HEUA+T

MAX1686HEUA+T

Maxim Integrated

IC REG CHARG PUMP SIM 1OUT 8UMAX

SMBJ40A

SMBJ40A

Bourns

TVS DIODE 40V 64.5V SMB

MT41K256M16HA-125 AIT:E

MT41K256M16HA-125 AIT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

MTA8ATF51264HZ-2G6B1

MTA8ATF51264HZ-2G6B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

TAJE477K010RNJ

TAJE477K010RNJ

CAP TANT 470UF 10% 10V 2917

MIC2026-1YM

MIC2026-1YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC