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GT10G131(TE12L,Q)

GT10G131(TE12L,Q)

For Reference Only

Part Number GT10G131(TE12L,Q)
PNEDA Part # GT10G131-TE12L-Q
Description IGBT 400V 1W 8-SOIC
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,030
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GT10G131(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberGT10G131(TE12L,Q)
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
GT10G131(TE12L, GT10G131(TE12L Datasheet (Total Pages: 7, Size: 226.99 KB)
PDFGT10G131(TE12L Datasheet Cover
GT10G131(TE12L Datasheet Page 2 GT10G131(TE12L Datasheet Page 3 GT10G131(TE12L Datasheet Page 4 GT10G131(TE12L Datasheet Page 5 GT10G131(TE12L Datasheet Page 6 GT10G131(TE12L Datasheet Page 7

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GT10G131(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.3V @ 4V, 200A
Power - Max1W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C3.1µs/2µs
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP (5.5x6.0)

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