Transistors

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Records 64,903

Page 2043/2164

Part Number	Description	In Stock
FGPF70N30TDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 300V 49.2W TO220F Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A Power - Max: 49.2W Switching Energy: - Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 21ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock8,190
FGPF70N30TTU ON Semiconductor	Transistors - IGBTs - Single IGBT 300V 49.2W TO220F Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A Power - Max: 49.2W Switching Energy: - Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock4,122
FGPF70N33BTTU ON Semiconductor	Transistors - IGBTs - Single IGBT 330V 48W TO220F Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A Power - Max: 48W Switching Energy: - Input Type: Standard Gate Charge: 49nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock7,182
FGPF7N60LSDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 14A 45W TO220F Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 21A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Power - Max: 45W Switching Energy: 270µJ (on), 3.8mJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 120ns/410ns Test Condition: 300V, 7A, 470Ohm, 15V Reverse Recovery Time (trr): 65ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock7,704
FGPF7N60RUFDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 14A 41W TO220F Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 21A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 7A Power - Max: 41W Switching Energy: 230µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 60ns/60ns Test Condition: 300V, 7A, 30Ohm, 15V Reverse Recovery Time (trr): 65ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock2,358
FGPF90N30 ON Semiconductor	Transistors - IGBTs - Single IGBT 300V 56.8W TO220F Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 30A Power - Max: 56.8W Switching Energy: - Input Type: Standard Gate Charge: 93nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock7,470
FGS15N40LTF ON Semiconductor	Transistors - IGBTs - Single IGBT 400V 2W 8SOP Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 8V @ 4V, 130A Power - Max: 2W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock135,783
FGY100T65SCDT ON Semiconductor	Transistors - IGBTs - Single FS3TIGBT TO247 100A 650V Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Power - Max: 750W Switching Energy: 5.4mJ (on), 3.8mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 84ns/216ns Test Condition: 400V, 100A, 4.7Ohm, 15V Reverse Recovery Time (trr): 62ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock2,700
FGY120T65SPD-F085 ON Semiconductor	Transistors - IGBTs - Single IGBT 650V 240A 882W TO-247 Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 378A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 120A Power - Max: 882W Switching Energy: 6.8µJ (on), 3.5µJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 53ns/102ns Test Condition: 400V, 120A, 5Ohm, 15V Reverse Recovery Time (trr): 123ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Exposed Pad Supplier Device Package: PowerTO-247-3	In Stock8,148
FGY160T65SPD-F085 ON Semiconductor	Transistors - IGBTs - Single 650V FS GEN3 TRENCH IGBT Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 480A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A Power - Max: 882W Switching Energy: 12.4mJ (on), 5.7mJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 53ns/98ns Test Condition: 400V, 160A, 15V Reverse Recovery Time (trr): 132ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,508
FGY40T120SMD ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 80A TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 882W Switching Energy: 2.7mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 40ns/475ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 65ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock9,348
FGY60T120SQDN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 60A UFS Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A Power - Max: 517W Switching Energy: - Input Type: Standard Gate Charge: 311nC Td (on/off) @ 25°C: 52ns/296ns Test Condition: 600V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock10,512
FGY75N60SMD ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 150A 750W POWER-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A Power - Max: 750W Switching Energy: 2.3mJ (on), 770µJ (off) Input Type: Standard Gate Charge: 248nC Td (on/off) @ 25°C: 24ns/136ns Test Condition: 400V, 75A, 3Ohm, 15V Reverse Recovery Time (trr): 55ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PowerTO-247-3	In Stock8,244
FGY75T120SQDN ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 75A UFS Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Power - Max: 790W Switching Energy: 6.25mJ (on), 1.96mJ (off) Input Type: Standard Gate Charge: 399nC Td (on/off) @ 25°C: 64ns/332ns Test Condition: 600V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 99ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock4,878
FGY75T95LQDT ON Semiconductor	Transistors - IGBTs - Single IGBT 950V 75A Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 950V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.69V @ 15V, 75A Power - Max: 453W Switching Energy: 2mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 663.3nC Td (on/off) @ 25°C: 52ns/496ns Test Condition: 600V, 37.5A, 4.7Ohm, 15V Reverse Recovery Time (trr): 259ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: TO-247-3	In Stock2,034
FGY75T95SQDT ON Semiconductor	Transistors - IGBTs - Single IGBT 950V 75A Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 950V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A Power - Max: 434W Switching Energy: 8.8mJ (on), 3.2mJ (off) Input Type: Standard Gate Charge: 137nC Td (on/off) @ 25°C: 28.8ns/117ns Test Condition: 600V, 75A, 4.7Ohm, 15V Reverse Recovery Time (trr): 259ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: TO-247-3	In Stock7,938
FID35-06C IXYS	Transistors - IGBTs - Single IGBT 600V 38A 125W I4PAC5 Manufacturer: IXYS Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 38A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 125W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: - Test Condition: 300V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 Supplier Device Package: ISOPLUS i4-PAC™	In Stock5,778
FID36-06D IXYS	Transistors - IGBTs - Single IGBT 600V 38A 125W I4PAC5 Manufacturer: IXYS Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 38A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 125W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25°C: - Test Condition: 300V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 Supplier Device Package: ISOPLUS i4-PAC™	In Stock149
FID60-06D IXYS	Transistors - IGBTs - Single IGBT 600V 65A 200W I4PAC5 Manufacturer: IXYS Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 200W Switching Energy: 1mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: - Test Condition: 300V, 30A, 22Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 Supplier Device Package: ISOPLUS i4-PAC™	In Stock3,380
FIO50-12BD IXYS	Transistors - IGBTs - Single IGBT 1200V 50A 200W I4PAC5 Manufacturer: IXYS Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A Power - Max: 200W Switching Energy: 4.6mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: - Test Condition: 600V, 30A, 39Ohm, 15V Reverse Recovery Time (trr): 150ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac™-5 Supplier Device Package: ISOPLUS i4-PAC™	In Stock2,016
GA35XCP12-247 GeneSiC Semiconductor	Transistors - IGBTs - Single IGBT 1200V SOT247 Manufacturer: GeneSiC Semiconductor Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 35A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 35A Power - Max: - Switching Energy: 2.66mJ (on), 4.35mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: - Test Condition: 800V, 35A, 22Ohm, 15V Reverse Recovery Time (trr): 36ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AB	In Stock6,624
GN2470K4-G Microchip Technology	Transistors - IGBTs - Single IC IGBT 700V 3.5A 3DPAK Manufacturer: Microchip Technology Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 700V Current - Collector (Ic) (Max): 1A Current - Collector Pulsed (Icm): 3.5A Vce(on) (Max) @ Vge, Ic: 5V @ 13V, 3A Power - Max: 2.5W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 8ns/20ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	In Stock3,510
GPA015A120MN-ND Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 30A 212W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 212W Switching Energy: 1.61mJ (on), 530µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 25ns/166ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 320ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	In Stock8,568
GPA020A120MN-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 40A 223W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 223W Switching Energy: 2.8mJ (on), 480µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 30ns/150ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 425ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	In Stock8,640
GPA020A135MN-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1350V 40A 223W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A Power - Max: 223W Switching Energy: 2.5mJ (on), 760µJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: 25ns/175ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 425ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3P	In Stock3,024
GPA025A120MN-ND Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 50A 312W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A Power - Max: 312W Switching Energy: 4.15mJ (on), 870µJ (off) Input Type: Standard Gate Charge: 350nC Td (on/off) @ 25°C: 57ns/240ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 480ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	In Stock7,452
GPA030A120I-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 60A 329W TO247 Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 329W Switching Energy: 4.5mJ (on), 850µJ (off) Input Type: Standard Gate Charge: 330nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 450ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,218
GPA030A120MN-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 60A 329W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 329W Switching Energy: 4.5mJ (on), 850µJ (off) Input Type: Standard Gate Charge: 330nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 450ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	In Stock4,212
GPA030A135MN-FDR Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1350V 60A 329W TO3PN Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 329W Switching Energy: 4.4mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 300nC Td (on/off) @ 25°C: 30ns/145ns Test Condition: 600V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 450ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3 Supplier Device Package: TO-3PN	In Stock8,856
GPA040A120L-FD Global Power Technologies Group	Transistors - IGBTs - Single IGBT 1200V 80A 480W TO264 Manufacturer: Global Power Technologies Group Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 480W Switching Energy: 5.3mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 480nC Td (on/off) @ 25°C: 55ns/200ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock6,264

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