Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

GT8G133(TE12L,Q)

GT8G133(TE12L,Q)

For Reference Only

Part Number GT8G133(TE12L,Q)
PNEDA Part # GT8G133-TE12L-Q
Description IGBT 400V 600MW 8TSSOP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GT8G133(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberGT8G133(TE12L,Q)
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
GT8G133(TE12L, GT8G133(TE12L Datasheet (Total Pages: 7, Size: 221.77 KB)
PDFGT8G133(TE12L Datasheet Cover
GT8G133(TE12L Datasheet Page 2 GT8G133(TE12L Datasheet Page 3 GT8G133(TE12L Datasheet Page 4 GT8G133(TE12L Datasheet Page 5 GT8G133(TE12L Datasheet Page 6 GT8G133(TE12L Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • GT8G133(TE12L,Q) Datasheet
  • where to find GT8G133(TE12L,Q)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage GT8G133(TE12L,Q)
  • GT8G133(TE12L,Q) PDF Datasheet
  • GT8G133(TE12L,Q) Stock

  • GT8G133(TE12L,Q) Pinout
  • Datasheet GT8G133(TE12L,Q)
  • GT8G133(TE12L,Q) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • GT8G133(TE12L,Q) Price
  • GT8G133(TE12L,Q) Distributor

GT8G133(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.9V @ 4V, 150A
Power - Max600mW
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C1.7µs/2µs
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

The Products You May Be Interested In

FGH40T65SQD-F155

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

238W

Switching Energy

138µJ (on), 52µJ (off)

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

16.4ns/86.4ns

Test Condition

400V, 10A, 6Ohm, 15V

Reverse Recovery Time (trr)

31.8ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IXGH28N90B

IXYS

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

51A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 28A

Power - Max

200W

Switching Energy

1.2mJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

30ns/100ns

Test Condition

720V, 28A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

NGTB20N120LWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

192W

Switching Energy

3.1mJ (on), 700µJ (off)

Input Type

Standard

Gate Charge

200nC

Td (on/off) @ 25°C

86ns/235ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

APT40GP60SG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

543W

Switching Energy

385µJ (on), 352µJ (off)

Input Type

Standard

Gate Charge

135nC

Td (on/off) @ 25°C

20ns/64ns

Test Condition

400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

D3 [S]

FGA4060ADF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

Power - Max

238W

Switching Energy

1.37mJ (on), 250µJ (off)

Input Type

Standard

Gate Charge

55.5nC

Td (on/off) @ 25°C

16.8ns/54.4ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

26ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3PN

Recently Sold

OP27GSZ

OP27GSZ

Analog Devices

IC OPAMP GP 1 CIRCUIT 8SOIC

MX25L12835FM2I-10G

MX25L12835FM2I-10G

Macronix

IC FLASH 128M SPI 104MHZ 8SOP

STGW45HF60WDI

STGW45HF60WDI

STMicroelectronics

IGBT 600V 70A 250W TO247

AK4480EF

AK4480EF

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 216K 30VSOP

FDMF6708N

FDMF6708N

ON Semiconductor

MODULE DRMOS 50A 40PQFN

AD826AR

AD826AR

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

DS3232SN#T&R

DS3232SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

VN10LP

VN10LP

Diodes Incorporated

MOSFET N-CH 60V 270MA TO92-3

ATMEGA2561-16AI

ATMEGA2561-16AI

Microchip Technology

IC MCU 8BIT 256KB FLASH 64TQFP

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

C8051F340-GQ

C8051F340-GQ

Silicon Labs

IC MCU 8BIT 64KB FLASH 48TQFP

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3