GT8G133(TE12L,Q)
For Reference Only
Part Number | GT8G133(TE12L,Q) |
PNEDA Part # | GT8G133-TE12L-Q |
Description | IGBT 400V 600MW 8TSSOP |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 4,896 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
GT8G133(TE12L Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module | |
Mfr. Part Number | GT8G133(TE12L,Q) |
Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- GT8G133(TE12L,Q) Datasheet
- where to find GT8G133(TE12L,Q)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage GT8G133(TE12L,Q)
- GT8G133(TE12L,Q) PDF Datasheet
- GT8G133(TE12L,Q) Stock
- GT8G133(TE12L,Q) Pinout
- Datasheet GT8G133(TE12L,Q)
- GT8G133(TE12L,Q) Supplier
- Toshiba Semiconductor and Storage Distributor
- GT8G133(TE12L,Q) Price
- GT8G133(TE12L,Q) Distributor
GT8G133(TE12L Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | 150A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 4V, 150A |
Power - Max | 600mW |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | 1.7µs/2µs |
Test Condition | - |
Reverse Recovery Time (trr) | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
The Products You May Be Interested In
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 150A Current - Collector Pulsed (Icm) 225A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A Power - Max 455W Switching Energy 3mJ (on), 750µJ (off) Input Type Standard Gate Charge 123nC Td (on/off) @ 25°C 28ns/86ns Test Condition 400V, 75A, 3Ohm, 15V Reverse Recovery Time (trr) 76ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
IXYS Manufacturer IXYS Series HiPerFAST™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 75A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Power - Max 480W Switching Energy 480µJ (off) Input Type Standard Gate Charge 146nC Td (on/off) @ 25°C 18ns/95ns Test Condition 400V, 50A, 2Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package TO-268 |
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 160A Current - Collector Pulsed (Icm) 300A Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 80A Power - Max 250W Switching Energy 2.5mJ (on), 1.76mJ (off) Input Type Standard Gate Charge 345nC Td (on/off) @ 25°C 40ns/90ns Test Condition 300V, 80A, 3.9Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264-3 |
IXYS Manufacturer IXYS Series GenX3™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 400A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A Power - Max 460W Switching Energy 1.5mJ (on), 1mJ (off) Input Type Standard Gate Charge 168nC Td (on/off) @ 25°C 25ns/138ns Test Condition 480V, 50A, 3Ohm, 15V Reverse Recovery Time (trr) 35ns Operating Temperature - Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PLUS247™-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A Power - Max 238W Switching Energy 1.37mJ (on), 250µJ (off) Input Type Standard Gate Charge 55.5nC Td (on/off) @ 25°C 16.8ns/54.4ns Test Condition 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr) 26ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3PN |