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HGT1S10N120BNST

HGT1S10N120BNST

For Reference Only

Part Number HGT1S10N120BNST
PNEDA Part # HGT1S10N120BNST
Description IGBT 1200V 35A 298W TO263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 20,412
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S10N120BNST Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S10N120BNST
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S10N120BNST, HGT1S10N120BNST Datasheet (Total Pages: 10, Size: 296.05 KB)
PDFHGT1S10N120BNS Datasheet Cover
HGT1S10N120BNS Datasheet Page 2 HGT1S10N120BNS Datasheet Page 3 HGT1S10N120BNS Datasheet Page 4 HGT1S10N120BNS Datasheet Page 5 HGT1S10N120BNS Datasheet Page 6 HGT1S10N120BNS Datasheet Page 7 HGT1S10N120BNS Datasheet Page 8 HGT1S10N120BNS Datasheet Page 9 HGT1S10N120BNS Datasheet Page 10

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HGT1S10N120BNST Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)35A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max298W
Switching Energy320µJ (on), 800µJ (off)
Input TypeStandard
Gate Charge100nC
Td (on/off) @ 25°C23ns/165ns
Test Condition960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Supplier Device Package

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