Transistors

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Records 64,903

Page 2068/2164

Part Number	Description	In Stock
IRG8CH137K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 820nC Td (on/off) @ 25°C: 115ns/570ns Test Condition: 600V, 150A, 2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,114
IRG8CH15K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,730
IRG8CH15K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,574
IRG8CH184K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 1110nC Td (on/off) @ 25°C: 135ns/640ns Test Condition: 600V, 200A, 2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock8,910
IRG8CH20K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,082
IRG8CH20K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,862
IRG8CH29K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,370
IRG8CH29K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,294
IRG8CH37K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,712
IRG8CH42K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,302
IRG8CH42K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock4,212
IRG8CH50K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 245nC Td (on/off) @ 25°C: 60ns/285ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,826
IRG8CH76K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 480nC Td (on/off) @ 25°C: 80ns/210ns Test Condition: 600V, 75A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,276
IRG8CH97K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 600nC Td (on/off) @ 25°C: 100ns/230ns Test Condition: 600V, 100A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,708
IRG8P08N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A 89W TO-247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock5,472
IRG8P08N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A 89W TO-247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock5,328
IRG8P15N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 125W TO-247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 125W Switching Energy: 600µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock2,286
IRG8P15N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 125W TO-247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 125W Switching Energy: 600µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2,826
IRG8P25N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A 180W TO-247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 180W Switching Energy: 800µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock2,016
IRG8P25N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A 180W TO-247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 180W Switching Energy: 800µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2,502
IRG8P40N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 60A 305W TO-247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 305W Switching Energy: 1.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock7,200
IRG8P40N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 60A 305W TO-247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 305W Switching Energy: 1.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock128
IRG8P45N65UD1-EPBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 45A CO-PAK-247 Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,338
IRG8P45N65UD1PBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 45A CO-PAK-247 Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,698
IRG8P50N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 80A 305W TO-247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 350W Switching Energy: 2.3mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock2,844
IRG8P50N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 80A 305W TO-247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 350W Switching Energy: 2.3mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock5,742
IRG8P60N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A 420W TO-247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 420W Switching Energy: 2.8mJ (on), 2.3mJ (off) Input Type: Standard Gate Charge: 345nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock2,844
IRG8P60N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A 420W TO-247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 420W Switching Energy: 2.8mJ (on), 2.3mJ (off) Input Type: Standard Gate Charge: 345nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock3,472
IRG8P75N65UD1-EPBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 75A CO-PAK-247 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,866
IRG8P75N65UD1PBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 75A CO-PAK-247 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock6,732

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