Transistors

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Records 64,903

Page 2066/2164

Part Number	Description	In Stock
IRG7CH73UED-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,110
IRG7CH73UEF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 540nC Td (on/off) @ 25°C: 90ns/580ns Test Condition: 600V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,664
IRG7CH75K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock6,534
IRG7CH75K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.53V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 500nC Td (on/off) @ 25°C: 120ns/445ns Test Condition: 600V, 100A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,094
IRG7CH75UED-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,508
IRG7CH75UEF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 770nC Td (on/off) @ 25°C: 120ns/890ns Test Condition: 600V, 100A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,580
IRG7CH81K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,470
IRG7CH81K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 745nC Td (on/off) @ 25°C: 70ns/330ns Test Condition: 600V, 150A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock4,248
IRG7PG35U-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 55A 210W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock5,670
IRG7PG35UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 55A 210W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock6,804
IRG7PG42UD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 85A 320W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock5,544
IRG7PG42UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 85A 320W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock4,212
IRG7PH28UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 115W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: 115W Switching Energy: 543µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: -/229ns Test Condition: 600V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock2,100
IRG7PH28UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 115W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: 115W Switching Energy: 543µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: -/229ns Test Condition: 600V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock6,984
IRG7PH28UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A TO247 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,622
IRG7PH30K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 180W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Power - Max: 180W Switching Energy: 530µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 14ns/110ns Test Condition: 600V, 9A, 22Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2,772
IRG7PH30K10PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 33A 210W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Power - Max: 210W Switching Energy: 530µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 14ns/110ns Test Condition: 600V, 9A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock8,748
IRG7PH35UD1-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock5,202
IRG7PH35UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock7,488
IRG7PH35UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2,322
IRG7PH35UD-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A COPAK247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 180W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock2,902
IRG7PH35UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 180W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 180W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock1,715
IRG7PH35U-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 55A TO247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock7,902
IRG7PH35U-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST TO247 Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,416
IRG7PH35UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 55A 210W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock8,154
IRG7PH37K10D-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 216W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 216W Switching Energy: 1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 50ns/240ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock139
IRG7PH37K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 216W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 216W Switching Energy: 1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 50ns/240ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock4,554
IRG7PH42UD1-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A COPAK247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock6,480
IRG7PH42UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 313W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock3,564
IRG7PH42UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 313W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2

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