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IRG8CH97K10F

IRG8CH97K10F

For Reference Only

Part Number IRG8CH97K10F
PNEDA Part # IRG8CH97K10F
Description IGBT 1200V 100A DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,708
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8CH97K10F Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8CH97K10F
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG8CH97K10F, IRG8CH97K10F Datasheet (Total Pages: 4, Size: 204.17 KB)
PDFIRG8CH97K10F Datasheet Cover
IRG8CH97K10F Datasheet Page 2 IRG8CH97K10F Datasheet Page 3 IRG8CH97K10F Datasheet Page 4

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IRG8CH97K10F Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2V @ 15V, 100A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge600nC
Td (on/off) @ 25°C100ns/230ns
Test Condition600V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

300W

Switching Energy

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Input Type

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Gate Charge

87nC

Td (on/off) @ 25°C

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Test Condition

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

46ns/205ns

Test Condition

960V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

1.7µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

i4-Pac™-5 (3 Leads)

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

160W

Switching Energy

110µJ (on), 230µJ (off)

Input Type

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Gate Charge

98nC

Td (on/off) @ 25°C

27ns/100ns

Test Condition

480V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Manufacturer

IXYS

Series

GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

240A

Current - Collector Pulsed (Icm)

600A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 100A

Power - Max

830W

Switching Energy

10mJ (on), 33mJ (off)

Input Type

Standard

Gate Charge

420nC

Td (on/off) @ 25°C

40ns/490ns

Test Condition

960V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PLUS247™-3

Manufacturer

IXYS

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 25A

Power - Max

50W

Switching Energy

-

Input Type

Standard

Gate Charge

42nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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