IRG8CH20K10F
For Reference Only
Part Number | IRG8CH20K10F |
PNEDA Part # | IRG8CH20K10F |
Description | IGBT 1200V ULTRA FAST DIE |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 2,862 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IRG8CH20K10F Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IRG8CH20K10F |
Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRG8CH20K10F Datasheet
- where to find IRG8CH20K10F
- Infineon Technologies
- Infineon Technologies IRG8CH20K10F
- IRG8CH20K10F PDF Datasheet
- IRG8CH20K10F Stock
- IRG8CH20K10F Pinout
- Datasheet IRG8CH20K10F
- IRG8CH20K10F Supplier
- Infineon Technologies Distributor
- IRG8CH20K10F Price
- IRG8CH20K10F Distributor
IRG8CH20K10F Specifications
Manufacturer | Infineon Technologies |
Series | - |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
Power - Max | - |
Switching Energy | - |
Input Type | Standard |
Gate Charge | 90nC |
Td (on/off) @ 25°C | 20ns/170ns |
Test Condition | 600V, 15A, 10Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
The Products You May Be Interested In
STMicroelectronics Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 120A Current - Collector Pulsed (Icm) 240A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 80A Power - Max 79W Switching Energy 1.8mJ (on), 1mJ (off) Input Type Standard Gate Charge 448nC Td (on/off) @ 25°C 60ns/220ns Test Condition 400V, 80A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3 Full Pack Supplier Device Package TO-3PF |
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A Power - Max 349W Switching Energy 820µJ (on), 260µJ (off) Input Type Standard Gate Charge 119nC Td (on/off) @ 25°C 12ns/92ns Test Condition 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr) 42ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3PN |
IXYS Manufacturer IXYS Series HiPerFAST™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 15A Current - Collector Pulsed (Icm) 48A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 85W Switching Energy 90µJ (off) Input Type Standard Gate Charge 32nC Td (on/off) @ 25°C 20ns/60ns Test Condition 480V, 12A, 18Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case ISOPLUS220™ Supplier Device Package ISOPLUS220™ |
IXYS Manufacturer IXYS Series XPT™, GenX4™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 38A Current - Collector Pulsed (Icm) 70A Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 12A Power - Max 160W Switching Energy 440µJ (on), 220µJ (off) Input Type Standard Gate Charge 34nC Td (on/off) @ 25°C 13ns/158ns Test Condition 400V, 12A, 20Ohm, 15V Reverse Recovery Time (trr) 43ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Microsemi Manufacturer Microsemi Corporation Series POWER MOS 8™ IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 78A Current - Collector Pulsed (Icm) 129A Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 25A Power - Max 337W Switching Energy 875µJ (on), 425µJ (off) Input Type Standard Gate Charge 116nC Td (on/off) @ 25°C 12ns/82ns Test Condition 600V, 25A, 4.7Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |