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IRG8CH37K10F

IRG8CH37K10F

For Reference Only

Part Number IRG8CH37K10F
PNEDA Part # IRG8CH37K10F
Description IGBT 1200V 100A DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,712
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8CH37K10F Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8CH37K10F
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG8CH37K10F, IRG8CH37K10F Datasheet (Total Pages: 4, Size: 196.23 KB)
PDFIRG8CH37K10F Datasheet Cover
IRG8CH37K10F Datasheet Page 2 IRG8CH37K10F Datasheet Page 3 IRG8CH37K10F Datasheet Page 4

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IRG8CH37K10F Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2V @ 15V, 35A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge210nC
Td (on/off) @ 25°C35ns/190ns
Test Condition600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Current - Collector Pulsed (Icm)

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 30A, 15Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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