Transistors

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Records 64,903

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Part Number	Description	In Stock
IRG7PH42UD2-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 60A 321W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 30A Power - Max: 321W Switching Energy: 1.32mJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/233ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock8,136
IRG7PH42UD2PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 60A 321W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 30A Power - Max: 321W Switching Energy: 1.32mJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/233ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock2,394
IRG7PH42UD-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 320W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock3,204
IRG7PH42UD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST TO247 Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock6,228
IRG7PH42UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 320W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock9,144
IRG7PH42U-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 90A 385W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 385W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock7,110
IRG7PH42UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 90A 385W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 385W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock5,544
IRG7PH44K10D-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 70A 320W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 320W Switching Energy: 2.1mJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 75ns/315ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock4,626
IRG7PH44K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 70A 320W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 320W Switching Energy: 2.1mJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 75ns/315ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock6,660
IRG7PH46UD-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 108A COPAK247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 390W Switching Energy: 2.61mJ (on), 1.85mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 45ns/410ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock6,216
IRG7PH46UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A 390W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 390W Switching Energy: 2.61mJ (on), 1.85mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 45ns/410ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock4,932
IRG7PH46U-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 108A TO247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 130A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 469W Switching Energy: 2.56mJ (on), 1.78mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 45ns/410ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock5,994
IRG7PH46UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 130A 469W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 130A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 469W Switching Energy: 2.56mJ (on), 1.78mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 45ns/410ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock3,168
IRG7PH50K10D-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 90A 400W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Power - Max: 400W Switching Energy: 2.3mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 300nC Td (on/off) @ 25°C: 90ns/340ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock6,498
IRG7PH50K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 90A 400W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Power - Max: 400W Switching Energy: 2.3mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 300nC Td (on/off) @ 25°C: 90ns/340ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 130ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock5,994
IRG7PH50U-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST TO247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 556W Switching Energy: 4.6mJ (on), 3.2mJ (off) Input Type: Standard Gate Charge: 440nC Td (on/off) @ 25°C: 35ns/430ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247AD	In Stock6,138
IRG7PH50UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 140A 556W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 556W Switching Energy: 3.6mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 290nC Td (on/off) @ 25°C: 35ns/430ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock7,074
IRG7PK35UD1-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1400V 40A 167W TO247AD Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1400V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A Power - Max: 167W Switching Energy: 650µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: -/150ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock5,418
IRG7PK35UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST TO247 Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock6,426
IRG7PK35UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1400V 40A 167W TO247AC Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1400V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A Power - Max: 167W Switching Energy: 650µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: -/150ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock256
IRG7PK42UD1-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST TO247 Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,280
IRG7PK42UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,484
IRG7PK42UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,382
IRG7PSH50UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 116A 462W TO274 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 116A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 462W Switching Energy: 3.6mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 440nC Td (on/off) @ 25°C: 35ns/430ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 190ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock7,290
IRG7PSH54K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 120A 520W TO274AA Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Power - Max: 520W Switching Energy: 4.8mJ (on), 2.8mJ (off) Input Type: Standard Gate Charge: 435nC Td (on/off) @ 25°C: 110ns/490ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock6,678
IRG7PSH73K10PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 220A 1150W SUPER247 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 220A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Power - Max: 1150W Switching Energy: 7.7mJ (on), 4.6mJ (off) Input Type: Standard Gate Charge: 360nC Td (on/off) @ 25°C: 63ns/267ns Test Condition: 600V, 75A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock4,824
IRG7S313UTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 40A 78W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A Power - Max: 78W Switching Energy: - Input Type: Standard Gate Charge: 33nC Td (on/off) @ 25°C: 1ns/65ns Test Condition: 196V, 12A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,580
IRG8B08N120KDPBF Infineon Technologies	Transistors - IGBTs - Single DIODE 1200V 8A TO-220 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock5,670
IRG8CH106K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 110A DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 110A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 700nC Td (on/off) @ 25°C: 80ns/380ns Test Condition: 600V, 110A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock7,218
IRG8CH10K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 5A DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,778

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