Transistors

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Records 64,903

Page 2065/2164

Part Number	Description	In Stock
IRG6I330U-110P Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A Power - Max: 43W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 39ns/120ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock3,580
IRG6I330U-111P Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A Power - Max: 43W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 39ns/120ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock4,626
IRG6I330U-168P Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A Power - Max: 43W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock6,570
IRG6I330UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A Power - Max: 43W Switching Energy: - Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 39ns/120ns Test Condition: 196V, 25A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	In Stock2,034
IRG6IC30U-110P Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 28A 43W TO220ABFP Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.38V @ 15V, 120A Power - Max: 43W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	In Stock3,204
IRG6IC30UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 25A 37W TO220ABFP Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.88V @ 15V, 120A Power - Max: 37W Switching Energy: - Input Type: Standard Gate Charge: 79nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 400V, 25A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	In Stock3,508
IRG6S320UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 50A 114W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A Power - Max: 114W Switching Energy: - Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 24ns/89ns Test Condition: 196V, 12A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock4,464
IRG6S320UTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 50A 114W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A Power - Max: 114W Switching Energy: - Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 24ns/89ns Test Condition: 196V, 12A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock4,842
IRG6S320UTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 50A 114W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 24A Power - Max: 114W Switching Energy: - Input Type: Standard Gate Charge: 46nC Td (on/off) @ 25°C: 24ns/89ns Test Condition: 196V, 12A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock5,382
IRG6S330UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 330V 70A 160W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A Power - Max: 160W Switching Energy: - Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 39ns/120ns Test Condition: 196V, 25A, 10Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock7,902
IRG7CH11K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,078
IRG7CH20K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,028
IRG7CH23K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,560
IRG7CH28UED Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,808
IRG7CH28UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 2.5A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 35ns/225ns Test Condition: 600V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,724
IRG7CH30K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.56V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 4.8nC Td (on/off) @ 25°C: 10ns/90ns Test Condition: 600V, 10A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,796
IRG7CH35UED Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,114
IRG7CH35UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 5A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,672
IRG7CH37K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 28ns/122ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,682
IRG7CH42UED Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,888
IRG7CH42UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 5A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,736
IRG7CH44K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 60ns/230ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock6,966
IRG7CH46UED Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,410
IRG7CH46UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock8,424
IRG7CH50K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 50ns/280ns Test Condition: 600V, 35A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,832
IRG7CH50UED Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,508
IRG7CH50UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: * IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock5,544
IRG7CH54K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 290nC Td (on/off) @ 25°C: 75ns/305ns Test Condition: 600V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,736
IRG7CH73K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 360nC Td (on/off) @ 25°C: 63ns/267ns Test Condition: 600V, 75A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock8,118
IRG7CH73K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 105ns/45ns Test Condition: 600V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,760

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