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IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

For Reference Only

Part Number IRG8P50N120KD-EPBF
PNEDA Part # IRG8P50N120KD-EPBF
Description IGBT 1200V 80A 305W TO-247AD
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8P50N120KD-EPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8P50N120KD-EPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG8P50N120KD-EPBF, IRG8P50N120KD-EPBF Datasheet (Total Pages: 11, Size: 603.57 KB)
PDFIRG8P50N120KD-EPBF Datasheet Cover
IRG8P50N120KD-EPBF Datasheet Page 2 IRG8P50N120KD-EPBF Datasheet Page 3 IRG8P50N120KD-EPBF Datasheet Page 4 IRG8P50N120KD-EPBF Datasheet Page 5 IRG8P50N120KD-EPBF Datasheet Page 6 IRG8P50N120KD-EPBF Datasheet Page 7 IRG8P50N120KD-EPBF Datasheet Page 8 IRG8P50N120KD-EPBF Datasheet Page 9 IRG8P50N120KD-EPBF Datasheet Page 10 IRG8P50N120KD-EPBF Datasheet Page 11

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IRG8P50N120KD-EPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)105A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 35A
Power - Max350W
Switching Energy2.3mJ (on), 1.9mJ (off)
Input TypeStandard
Gate Charge315nC
Td (on/off) @ 25°C35ns/190ns
Test Condition600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)170ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

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