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IRG8CH76K10F

IRG8CH76K10F

For Reference Only

Part Number IRG8CH76K10F
PNEDA Part # IRG8CH76K10F
Description IGBT CHIP WAFER
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8CH76K10F Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8CH76K10F
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG8CH76K10F, IRG8CH76K10F Datasheet (Total Pages: 4, Size: 197.05 KB)
PDFIRG8CH76K10F Datasheet Cover
IRG8CH76K10F Datasheet Page 2 IRG8CH76K10F Datasheet Page 3 IRG8CH76K10F Datasheet Page 4

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IRG8CH76K10F Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2V @ 15V, 75A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge480nC
Td (on/off) @ 25°C80ns/210ns
Test Condition600V, 75A, 1.5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

105ns

Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

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