IRG8CH137K10F
For Reference Only
| Part Number | IRG8CH137K10F |
| PNEDA Part # | IRG8CH137K10F |
| Description | IGBT CHIP WAFER |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,114 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRG8CH137K10F Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRG8CH137K10F |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRG8CH137K10F Datasheet
- where to find IRG8CH137K10F
- Infineon Technologies
- Infineon Technologies IRG8CH137K10F
- IRG8CH137K10F PDF Datasheet
- IRG8CH137K10F Stock
- IRG8CH137K10F Pinout
- Datasheet IRG8CH137K10F
- IRG8CH137K10F Supplier
- Infineon Technologies Distributor
- IRG8CH137K10F Price
- IRG8CH137K10F Distributor
IRG8CH137K10F Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 150A |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 150A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 820nC |
| Td (on/off) @ 25°C | 115ns/570ns |
| Test Condition | 600V, 150A, 2Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 54A Current - Collector Pulsed (Icm) 96A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 167W Switching Energy 55µJ (on), 50µJ (off) Input Type Standard Gate Charge 78nC Td (on/off) @ 25°C 17ns/96ns Test Condition 390V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
Manufacturer Renesas Electronics America Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 25A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 12A Power - Max 63W Switching Energy 100µJ (on), 160µJ (off) Input Type Standard Gate Charge 19nC Td (on/off) @ 25°C 32ns/85ns Test Condition 300V, 12A, 5Ohm, 15V Reverse Recovery Time (trr) 100ns Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-83 Supplier Device Package 4-LDPAK |
Manufacturer ON Semiconductor Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 140A Current - Collector Pulsed (Icm) 140A Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A Power - Max 300W Switching Energy 1.25mJ (on), 530µJ (off) Input Type Standard Gate Charge 128nC Td (on/off) @ 25°C 75ns/128ns Test Condition 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr) 70ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 16A Current - Collector Pulsed (Icm) 30A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A Power - Max 55W Switching Energy 141µJ (on), 215µJ (off) Input Type Standard Gate Charge 30nC Td (on/off) @ 25°C 15ns/36ns Test Condition 300V, 10A, 20Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220F |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 10A Current - Collector Pulsed (Icm) 24A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A Power - Max 50W Switching Energy 33µJ (off) Input Type Standard Gate Charge 21nC Td (on/off) @ 25°C 5ns/53ns Test Condition 480V, 3A, 10Ohm, 15V Reverse Recovery Time (trr) 45ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
