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IRG8P08N120KDPBF

IRG8P08N120KDPBF

For Reference Only

Part Number IRG8P08N120KDPBF
PNEDA Part # IRG8P08N120KDPBF
Description IGBT 1200V 15A 89W TO-247AC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRG8P08N120KDPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRG8P08N120KDPBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IRG8P08N120KDPBF, IRG8P08N120KDPBF Datasheet (Total Pages: 13, Size: 662.92 KB)
PDFIRG8B08N120KDPBF Datasheet Cover
IRG8B08N120KDPBF Datasheet Page 2 IRG8B08N120KDPBF Datasheet Page 3 IRG8B08N120KDPBF Datasheet Page 4 IRG8B08N120KDPBF Datasheet Page 5 IRG8B08N120KDPBF Datasheet Page 6 IRG8B08N120KDPBF Datasheet Page 7 IRG8B08N120KDPBF Datasheet Page 8 IRG8B08N120KDPBF Datasheet Page 9 IRG8B08N120KDPBF Datasheet Page 10 IRG8B08N120KDPBF Datasheet Page 11

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IRG8P08N120KDPBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)15A
Current - Collector Pulsed (Icm)15A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 5A
Power - Max89W
Switching Energy300µJ (on), 300µJ (off)
Input TypeStandard
Gate Charge45nC
Td (on/off) @ 25°C20ns/160ns
Test Condition600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr)50ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

720µJ (on), 330µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

360V, 36A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

25ns/180ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

300V, 3A, 80Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

64A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 9A

Power - Max

60W

Switching Energy

250µJ (on), 640µJ (off)

Input Type

Standard

Gate Charge

27nC

Td (on/off) @ 25°C

43ns/240ns

Test Condition

480V, 9A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

NGTB25N120LWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 25A

Power - Max

192W

Switching Energy

3.4mJ (on), 800µJ (off)

Input Type

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Gate Charge

200nC

Td (on/off) @ 25°C

89ns/235ns

Test Condition

600V, 25A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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