Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
APT54GA60BD30 Microsemi	Transistors - IGBTs - Single IGBT 600V 96A 416W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 161A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 416W Switching Energy: 534µJ (on), 466µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 17ns/112ns Test Condition: 400V, 32A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock46
APT60GT60BRG Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 500W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Power - Max: 500W Switching Energy: 3.4mJ Input Type: Standard Gate Charge: 275nC Td (on/off) @ 25°C: 26ns/395ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock25,242
APT64GA90B Microsemi	Transistors - IGBTs - Single IGBT 900V 117A 500W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 193A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A Power - Max: 500W Switching Energy: 1857µJ (on), 2311µJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock6,606
APT64GA90B2D30 Microsemi	Transistors - IGBTs - Single IGBT 900V 117A 500W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 193A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A Power - Max: 500W Switching Energy: 1192µJ (on), 1088µJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock5,004
APT64GA90LD30 Microsemi	Transistors - IGBTs - Single IGBT 900V 117A 500W TO-264 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 193A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A Power - Max: 500W Switching Energy: 1192µJ (on), 1088µJ (off) Input Type: Standard Gate Charge: 162nC Td (on/off) @ 25°C: 18ns/131ns Test Condition: 600V, 38A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock6,354
APT65GP60B2G Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 833W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A Power - Max: 833W Switching Energy: 605µJ (on), 896µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 30ns/91ns Test Condition: 400V, 65A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock250
APT65GP60L2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 198A 833W TO264 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 198A Current - Collector Pulsed (Icm): 250A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A Power - Max: 833W Switching Energy: 605µJ (on), 895µJ (off) Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 30ns/90ns Test Condition: 400V, 65A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: -	In Stock8,838
APT68GA60B Microsemi	Transistors - IGBTs - Single IGBT 600V 121A 520W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 121A Current - Collector Pulsed (Icm): 202A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 520W Switching Energy: 715µJ (on), 607µJ (off) Input Type: Standard Gate Charge: 298nC Td (on/off) @ 25°C: 21ns/133ns Test Condition: 400V, 40A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock5,922
APT68GA60B2D40 Microsemi	Transistors - IGBTs - Single IGBT 600V 121A 520W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 121A Current - Collector Pulsed (Icm): 202A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 520W Switching Energy: 715µJ (on), 607µJ (off) Input Type: Standard Gate Charge: 198nC Td (on/off) @ 25°C: 21ns/133ns Test Condition: 400V, 40A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock7,290
APT68GA60LD40 Microsemi	Transistors - IGBTs - Single IGBT 600V 121A 520W TO-264 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 121A Current - Collector Pulsed (Icm): 202A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 520W Switching Energy: 715µJ (on), 607µJ (off) Input Type: Standard Gate Charge: 198nC Td (on/off) @ 25°C: 21ns/133ns Test Condition: 400V, 40A, 4.7Ohm, 15V Reverse Recovery Time (trr): 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock193
APT70GR120B2 Microsemi	Transistors - IGBTs - Single IGBT 1200V 160A 961W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A Power - Max: 961W Switching Energy: 3.82mJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 544nC Td (on/off) @ 25°C: 33ns/278ns Test Condition: 600V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,280
APT70GR120L Microsemi	Transistors - IGBTs - Single IGBT 1200V 160A 961W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A Power - Max: 961W Switching Energy: 3.82mJ (on), 2.58mJ (off) Input Type: Standard Gate Charge: 544nC Td (on/off) @ 25°C: 33ns/278ns Test Condition: 600V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock8,190
APT70GR65B Microsemi	Transistors - IGBTs - Single IGBT 650V 134A 595W TO-247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 260A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A Power - Max: 595W Switching Energy: 1.51mJ (on), 1.46mJ (off) Input Type: Standard Gate Charge: 305nC Td (on/off) @ 25°C: 19ns/170ns Test Condition: 433V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,174
APT70GR65B2DU40 Microsemi	Transistors - IGBTs - Single INSULATED GATE BIPOLAR TRANSISTO Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 280A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A Power - Max: 595W Switching Energy: - Input Type: Standard Gate Charge: 305nC Td (on/off) @ 25°C: 18ns/170ns Test Condition: 433V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ [B2]	In Stock5,400
APT70GR65B2SCD30 Microsemi	Transistors - IGBTs - Single INSULATED GATE BIPOLAR TRANSISTO Manufacturer: Microsemi Corporation Series: * IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 260A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A Power - Max: 595W Switching Energy: - Input Type: - Gate Charge: 305nC Td (on/off) @ 25°C: 19ns/170ns Test Condition: 433V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ [B2]	In Stock4,806
APT75GN120B2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 200A 833W TMAX Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 833W Switching Energy: 8045µJ (on), 7640µJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 60ns/620ns Test Condition: 800V, 75A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock5,976
APT75GN120LG Microsemi	Transistors - IGBTs - Single IGBT 1200V 200A 833W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 833W Switching Energy: 8620µJ (on), 11400µJ (off) Input Type: Standard Gate Charge: 425nC Td (on/off) @ 25°C: 60ns/620ns Test Condition: 800V, 75A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock97
APT75GN60B2DQ3G Microsemi	Transistors - IGBTs - Single IGBT 600V 155A 536W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 155A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Power - Max: 536W Switching Energy: 2500µJ (on), 2140µJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: -	In Stock3,508
APT75GN60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 155A 536W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 155A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Power - Max: 536W Switching Energy: 2500µJ (on), 2140µJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock7,056
APT75GN60LDQ3G Microsemi	Transistors - IGBTs - Single IGBT 600V 155A 536W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 155A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Power - Max: 536W Switching Energy: 2500µJ (on), 2140µJ (off) Input Type: Standard Gate Charge: 485nC Td (on/off) @ 25°C: 47ns/385ns Test Condition: 400V, 75A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock7,277
APT75GP120B2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 100A 1042W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A Power - Max: 1042W Switching Energy: 1620µJ (on), 2500µJ (off) Input Type: Standard Gate Charge: 320nC Td (on/off) @ 25°C: 20ns/163ns Test Condition: 600V, 75A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock259
APT80GA60B Microsemi	Transistors - IGBTs - Single IGBT 600V 143A 625W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 143A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A Power - Max: 625W Switching Energy: 840µJ (on), 751µJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 23ns/158ns Test Condition: 400V, 47A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock7,290
APT80GA60LD40 Microsemi	Transistors - IGBTs - Single IGBT 600V 143A 625W TO264 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 143A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A Power - Max: 625W Switching Energy: 840µJ (on), 751µJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 23ns/158ns Test Condition: 400V, 47A, 4.7Ohm, 15V Reverse Recovery Time (trr): 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock6,570
APT80GA90B Microsemi	Transistors - IGBTs - Single IGBT 900V 145A 625W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 145A Current - Collector Pulsed (Icm): 239A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Power - Max: 625W Switching Energy: 1652µJ (on), 1389µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 18ns/149ns Test Condition: 600V, 47A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock7,068
APT80GA90LD40 Microsemi	Transistors - IGBTs - Single IGBT 900V 145A 625W TO-264 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 145A Current - Collector Pulsed (Icm): 239A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Power - Max: 625W Switching Energy: 1652µJ (on), 1389µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 18ns/149ns Test Condition: 600V, 47A, 4.7Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock1,519
APT85GR120B2 Microsemi	Transistors - IGBTs - Single IGBT 1200V 170A 962W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 170A Current - Collector Pulsed (Icm): 340A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A Power - Max: 962W Switching Energy: 6mJ (on), 3.8mJ (off) Input Type: Standard Gate Charge: 660nC Td (on/off) @ 25°C: 43ns/300ns Test Condition: 600V, 85A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™	In Stock7,740
APT85GR120L Microsemi	Transistors - IGBTs - Single IGBT 1200V 170A 962W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 170A Current - Collector Pulsed (Icm): 340A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A Power - Max: 962W Switching Energy: 6mJ (on), 3.8mJ (off) Input Type: Standard Gate Charge: 660nC Td (on/off) @ 25°C: 43ns/300ns Test Condition: 600V, 85A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock6,894
APT95GR65B2 Microsemi	Transistors - IGBTs - Single IGBT 650V 208A 892W T-MAX Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 208A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A Power - Max: 892W Switching Energy: 3.12mJ (on), 2.55mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 29ns/226ns Test Condition: 433V, 95A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ [B2]	In Stock5,616
APT95GR65JDU60 Microsemi	Transistors - IGBTs - Single INSULATED GATE BIPOLAR TRANSISTO Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 135A Current - Collector Pulsed (Icm): 380A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A Power - Max: 446W Switching Energy: - Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 29ns/226ns Test Condition: 433V, 95A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	In Stock4,896
AUIRG4BC30S-S Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 34A 100W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 100W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,672

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