APT65GP60L2DQ2G
For Reference Only
| Part Number | APT65GP60L2DQ2G |
| PNEDA Part # | APT65GP60L2DQ2G |
| Description | IGBT 600V 198A 833W TO264 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 8,838 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT65GP60L2DQ2G Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT65GP60L2DQ2G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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APT65GP60L2DQ2G Specifications
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 7® |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 198A |
| Current - Collector Pulsed (Icm) | 250A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
| Power - Max | 833W |
| Switching Energy | 605µJ (on), 895µJ (off) |
| Input Type | Standard |
| Gate Charge | 210nC |
| Td (on/off) @ 25°C | 30ns/90ns |
| Test Condition | 400V, 65A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Supplier Device Package | - |
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