Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2032/2164

Part Number	Description	In Stock
APT44GA60B Microsemi	Transistors - IGBTs - Single IGBT 600V 78A 337W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 258µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/84ns Test Condition: 400V, 26A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock1,083
APT44GA60BD30 Microsemi	Transistors - IGBTs - Single IGBT 600V 78A 337W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 258µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/84ns Test Condition: 400V, 26A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock8,586
APT44GA60BD30C Microsemi	Transistors - IGBTs - Single IGBT 600V 78A 337W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 130A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A Power - Max: 337W Switching Energy: 409µJ (on), 450µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 16ns/102ns Test Condition: 400V, 26A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock7,236
APT45GP120B2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 113A 625W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 113A Current - Collector Pulsed (Icm): 170A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A Power - Max: 625W Switching Energy: 900µJ (on), 905µJ (off) Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 18ns/100ns Test Condition: 600V, 45A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock8,622
APT45GP120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 100A 625W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 170A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A Power - Max: 625W Switching Energy: 900µJ (on), 904µJ (off) Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: 18ns/102ns Test Condition: 600V, 45A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock462
APT45GR65B Microsemi	Transistors - IGBTs - Single IGBT 650V 92A 357W TO-247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 92A Current - Collector Pulsed (Icm): 168A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 357W Switching Energy: 900µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 15ns/100ns Test Condition: 433V, 45A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,292
APT45GR65B2DU30 Microsemi	Transistors - IGBTs - Single INSULATED GATE BIPOLAR TRANSISTO Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 118A Current - Collector Pulsed (Icm): 224A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 543W Switching Energy: - Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 15ns/100ns Test Condition: 433V, 45A, 4.3Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™ [B2]	In Stock5,742
APT45GR65BSCD10 Microsemi	Transistors - IGBTs - Single INSULATED GATE BIPOLAR TRANSISTO Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 118A Current - Collector Pulsed (Icm): 224A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 543W Switching Energy: - Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 15ns/100ns Test Condition: 433V, 45A, 4.3Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,086
APT45GR65SSCD10 Microsemi	Transistors - IGBTs - Single INSULATED GATE BIPOLAR TRANSISTO Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 118A Current - Collector Pulsed (Icm): 224A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 543W Switching Energy: - Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 15ns/100ns Test Condition: 433V, 45A, 4.3Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D3Pak	In Stock8,424
APT50GF120B2RG Microsemi	Transistors - IGBTs - Single IGBT 1200V 135A 781W TMAX Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 135A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A Power - Max: 781W Switching Energy: 3.6mJ (on), 2.64mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 25ns/260ns Test Condition: 800V, 50A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock8,730
APT50GF120LRG Microsemi	Transistors - IGBTs - Single IGBT 1200V 135A 781W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 135A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A Power - Max: 781W Switching Energy: 3.6mJ (on), 2.64mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 25ns/260ns Test Condition: 800V, 50A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock6,804
APT50GN120B2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 134A 543W TO-247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 543W Switching Energy: 4495µJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 28ns/320ns Test Condition: 800V, 50A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock7,614
APT50GN120L2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 134A 543W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 543W Switching Energy: 4495µJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 28ns/320ns Test Condition: 800V, 50A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: -	In Stock5,616
APT50GN60BDQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 107A 366W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 107A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Power - Max: 366W Switching Energy: 1185µJ (on), 1565µJ (off) Input Type: Standard Gate Charge: 325nC Td (on/off) @ 25°C: 20ns/230ns Test Condition: 400V, 50A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,436
APT50GN60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 107A 366W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 107A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Power - Max: 366W Switching Energy: 1185µJ (on), 1565µJ (off) Input Type: Standard Gate Charge: 325nC Td (on/off) @ 25°C: 20ns/230ns Test Condition: 400V, 50A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock5,850
APT50GP60B2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 150A 625W TMAX Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 190A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 625W Switching Energy: 465µJ (on), 635µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 19ns/85ns Test Condition: 400V, 50A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock6,228
APT50GP60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 625W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 190A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 625W Switching Energy: 465µJ (on), 637µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 19ns/83ns Test Condition: 400V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock4,302
APT50GP60LDLG Microsemi	Transistors - IGBTs - Single IGBT 600V 150A 625W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 150A Current - Collector Pulsed (Icm): 190A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Power - Max: 625W Switching Energy: 456µJ (on), 635µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 19ns/85ns Test Condition: 400V, 50A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock5,922
APT50GR120B2 Microsemi	Transistors - IGBTs - Single IGBT 1200V 117A 694W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A Power - Max: 694W Switching Energy: 2.14mJ (on), 1.48mJ (off) Input Type: Standard Gate Charge: 445nC Td (on/off) @ 25°C: 28ns/237ns Test Condition: 600V, 50A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,562
APT50GR120L Microsemi	Transistors - IGBTs - Single IGBT 1200V 117A 694W TO264 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 117A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A Power - Max: 694W Switching Energy: 2.14mJ (on), 1.48mJ (off) Input Type: Standard Gate Charge: 445nC Td (on/off) @ 25°C: 28ns/237ns Test Condition: 600V, 50A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	In Stock2,286
APT50GS60BRDLG Microsemi	Transistors - IGBTs - Single IGBT 600V 93A 415W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 93A Current - Collector Pulsed (Icm): 195A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: 415W Switching Energy: 755µJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 50A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,352
APT50GS60BRDQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 93A 415W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 93A Current - Collector Pulsed (Icm): 195A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: 415W Switching Energy: 755µJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 40A, 4.7Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock22,464
APT50GS60BRG Microsemi	Transistors - IGBTs - Single IGBT 600V 93A 415W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 93A Current - Collector Pulsed (Icm): 195A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: 415W Switching Energy: 755µJ (off) Input Type: Standard Gate Charge: 235nC Td (on/off) @ 25°C: 16ns/225ns Test Condition: 400V, 50A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,546
APT50GT120B2RDLG Microsemi	Transistors - IGBTs - Single IGBT 1200V 106A 694W TO-247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 106A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Power - Max: 694W Switching Energy: 3585µJ (on), 1910µJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 23ns/215ns Test Condition: 800V, 50A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock5,760
APT50GT120B2RDQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 94A 625W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 94A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Power - Max: 625W Switching Energy: 2330µJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 24ns/230ns Test Condition: 800V, 50A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: -	In Stock5,760
APT50GT120B2RG Microsemi	Transistors - IGBTs - Single IGBT 1200V 94A 625W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 94A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Power - Max: 625W Switching Energy: 2330µJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 24ns/230ns Test Condition: 800V, 50A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: -	In Stock8,340
APT50GT120LRDQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 106A 694W TO264 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 106A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A Power - Max: 694W Switching Energy: 2585µJ (on), 1910µJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 23ns/215ns Test Condition: 800V, 50A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 [L]	In Stock4,464
APT50GT60BRDQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 110A 446W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 110A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: 446W Switching Energy: 995µJ (on), 1070µJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 14ns/240ns Test Condition: 400V, 50A, 5Ohm, 15V Reverse Recovery Time (trr): 22ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,762
APT50GT60BRG Microsemi	Transistors - IGBTs - Single IGBT 600V 110A 446W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 110A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: 446W Switching Energy: 995µJ (on), 1070µJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 14ns/240ns Test Condition: 400V, 50A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock4,428
APT54GA60B Microsemi	Transistors - IGBTs - Single IGBT 600V 96A 416W TO-247 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 161A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A Power - Max: 416W Switching Energy: 534µJ (on), 466µJ (off) Input Type: Standard Gate Charge: 158nC Td (on/off) @ 25°C: 17ns/112ns Test Condition: 400V, 32A, 4.7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock4,464

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