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APT65GP60B2G

APT65GP60B2G

For Reference Only

Part Number APT65GP60B2G
PNEDA Part # APT65GP60B2G
Description IGBT 600V 100A 833W TMAX
Manufacturer Microsemi
Unit Price
1 ---------- $194.3656
50 ---------- $185.2547
100 ---------- $176.1438
200 ---------- $167.0329
400 ---------- $159.4405
500 ---------- $151.8481
In Stock 250
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT65GP60B2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT65GP60B2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT65GP60B2G Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)250A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 65A
Power - Max833W
Switching Energy605µJ (on), 896µJ (off)
Input TypeStandard
Gate Charge210nC
Td (on/off) @ 25°C30ns/91ns
Test Condition400V, 65A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

94nC

Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Td (on/off) @ 25°C

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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