APT80GA90B
For Reference Only
| Part Number | APT80GA90B |
| PNEDA Part # | APT80GA90B |
| Description | IGBT 900V 145A 625W TO247 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,068 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT80GA90B Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT80GA90B |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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APT80GA90B Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 145A |
| Current - Collector Pulsed (Icm) | 239A |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 47A |
| Power - Max | 625W |
| Switching Energy | 1652µJ (on), 1389µJ (off) |
| Input Type | Standard |
| Gate Charge | 200nC |
| Td (on/off) @ 25°C | 18ns/149ns |
| Test Condition | 600V, 47A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
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Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 15A Power - Max 259W Switching Energy 380µJ (on), 370µJ (off) Input Type Standard Gate Charge 67nC Td (on/off) @ 25°C 23ns/111ns Test Condition 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 52A Current - Collector Pulsed (Icm) 104A Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A Power - Max 297W Switching Energy 2.8mJ (on), 2.8mJ (off) Input Type Standard Gate Charge 170nC Td (on/off) @ 25°C 25ns/210ns Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
Manufacturer Infineon Technologies Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 12A Current - Collector Pulsed (Icm) 18A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A Power - Max 77W Switching Energy 56µJ (on), 122µJ (off) Input Type Standard Gate Charge 19.5nC Td (on/off) @ 25°C 27ns/75ns Test Condition 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr) 74ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252AA |
