APT64GA90B2D30
For Reference Only
| Part Number | APT64GA90B2D30 |
| PNEDA Part # | APT64GA90B2D30 |
| Description | IGBT 900V 117A 500W TO-247 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,004 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT64GA90B2D30 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT64GA90B2D30 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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APT64GA90B2D30 Specifications
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 900V |
| Current - Collector (Ic) (Max) | 117A |
| Current - Collector Pulsed (Icm) | 193A |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 38A |
| Power - Max | 500W |
| Switching Energy | 1192µJ (on), 1088µJ (off) |
| Input Type | Standard |
| Gate Charge | 162nC |
| Td (on/off) @ 25°C | 18ns/131ns |
| Test Condition | 600V, 38A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
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Manufacturer Renesas Electronics America Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) - Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic - Power - Max - Switching Energy - Input Type - Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
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