APT70GR65B2SCD30
For Reference Only
| Part Number | APT70GR65B2SCD30 |
| PNEDA Part # | APT70GR65B2SCD30 |
| Description | INSULATED GATE BIPOLAR TRANSISTO |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,806 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 20 - Apr 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT70GR65B2SCD30 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT70GR65B2SCD30 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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APT70GR65B2SCD30 Specifications
| Manufacturer | Microsemi Corporation |
| Series | * |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 134A |
| Current - Collector Pulsed (Icm) | 260A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A |
| Power - Max | 595W |
| Switching Energy | - |
| Input Type | - |
| Gate Charge | 305nC |
| Td (on/off) @ 25°C | 19ns/170ns |
| Test Condition | 433V, 70A, 4.3Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | T-MAX™ [B2] |
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