Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2035/2164

Part Number	Description	In Stock
AUIRGPS4070D0 Infineon Technologies	Transistors - IGBTs - Single IGBT 700V SUPER PG-TO274-3-903 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Power - Max: 750W Switching Energy: 5.7mJ (on), 4.2mJ (off) Input Type: Standard Gate Charge: 250nC Td (on/off) @ 25°C: 40ns/140ns Test Condition: 400V, 120A, 4.7Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: PG-TO274-3-903	In Stock1,956
AUIRGR4045D Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 77W DPAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	In Stock7,794
AUIRGR4045DTRL Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 77W DPAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	In Stock5,184
AUIRGS30B60K Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 78A 370W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Power - Max: 370W Switching Energy: 350µJ (on), 825µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 46ns/185ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock8,208
AUIRGS30B60KTRL Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 78A 370W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Power - Max: 370W Switching Energy: 350µJ (on), 825µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 46ns/185ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock3,436
AUIRGS4062D1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 59A 246W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 59A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 246W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK	In Stock6,732
AUIRGS4062D1TRL Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 59A 246W D2PAK Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 59A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 246W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK	In Stock2,484
AUIRGSL30B60K Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 78A 370W TO262 Manufacturer: Infineon Technologies Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Power - Max: 370W Switching Energy: 350µJ (on), 825µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 46ns/185ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock14,454
AUIRGSL4062D1 Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 59A 246W TO-262 Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 59A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 246W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock12,792
AUIRGU4045D Infineon Technologies	Transistors - IGBTs - Single DIODE 600V IGBT Manufacturer: Infineon Technologies Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK	In Stock8,928
AUXKNG4PH50S-215 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V TO247-3 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,056
AUXMIGP4063D Infineon Technologies	Transistors - IGBTs - Single IGBT 600V TO-247 COPAK Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,942
BUP213 Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 32A 200W TO220 Manufacturer: Infineon Technologies Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Power - Max: 200W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 70ns/400ns Test Condition: 600V, 15A, 82Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	In Stock2,376
DGTD120T25S1PT Diodes Incorporated	Transistors - IGBTs - Single IGBT 1200V-X TO247 TUBE 0.45K Manufacturer: Diodes Incorporated Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 348W Switching Energy: 1.44mJ (on), 550µJ (off) Input Type: Standard Gate Charge: 204nC Td (on/off) @ 25°C: 73ns/269ns Test Condition: 600V, 25A, 23Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,284
DGTD120T40S1PT Diodes Incorporated	Transistors - IGBTs - Single IGBT 1200V-X TO247 TUBE 0.45K Manufacturer: Diodes Incorporated Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 357W Switching Energy: 1.96mJ (on), 540µJ (off) Input Type: Standard Gate Charge: 341nC Td (on/off) @ 25°C: 65ns/308ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,058
DGTD65T15H2TF Diodes Incorporated	Transistors - IGBTs - Single IGBT600V-XITO-220AB Manufacturer: Diodes Incorporated Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 48W Switching Energy: 270µJ (on), 86µJ (off) Input Type: Standard Gate Charge: 61nC Td (on/off) @ 25°C: 19ns/128ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 150ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	In Stock14,328
DGTD65T40S1PT Diodes Incorporated	Transistors - IGBTs - Single IGBT 600V-X TO247 TUBE 0.45K Manufacturer: Diodes Incorporated Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 341W Switching Energy: 1.15mJ (on), 350µJ (off) Input Type: Standard Gate Charge: 219nC Td (on/off) @ 25°C: 58ns/245ns Test Condition: 400V, 40A, 7.9Ohm, 15V Reverse Recovery Time (trr): 145ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,526
DGTD65T40S2PT Diodes Incorporated	Transistors - IGBTs - Single IGBT 600V-X TO247 TUBE 0.45K Manufacturer: Diodes Incorporated Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 230W Switching Energy: 500µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 60nC Td (on/off) @ 25°C: 6ns/55ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,148
DGTD65T50S1PT Diodes Incorporated	Transistors - IGBTs - Single IGBT 600V-X TO247 TUBE 0.45K Manufacturer: Diodes Incorporated Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Power - Max: 375W Switching Energy: 770µJ (on), 550µJ (off) Input Type: Standard Gate Charge: 287nC Td (on/off) @ 25°C: 58ns/328ns Test Condition: 400V, 50A, 7.9Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,730
DGTD65T60S2PT Diodes Incorporated	Transistors - IGBTs - Single IGBT 600V-X TO247 TUBE 0.45K Manufacturer: Diodes Incorporated Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Power - Max: 428W Switching Energy: 920µJ (on), 530µJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 42ns/142ns Test Condition: 400V, 60A, 7Ohm, 15V Reverse Recovery Time (trr): 205ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock2,988
FGA120N30DTU ON Semiconductor	Transistors - IGBTs - Single IGBT 300V 120A 290W TO3P Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A Power - Max: 290W Switching Energy: - Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 21ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock2,448
FGA15N120ANDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 24A 200W TO3P Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Power - Max: 200W Switching Energy: 3.27mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 90ns/310ns Test Condition: 600V, 15A, 20Ohm, 15V Reverse Recovery Time (trr): 330ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	In Stock3,330
FGA15N120ANTDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A 186W TO3P Manufacturer: ON Semiconductor Series: - IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 186W Switching Energy: 3mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 15ns/160ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 330ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock3,132
FGA15N120ANTDTU-F109 ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A 186W TO3P Manufacturer: ON Semiconductor Series: - IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 186W Switching Energy: 3mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 15ns/160ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 330ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock11,616
FGA15N120FTDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A 220W TO3PN Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 220W Switching Energy: - Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 575ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock5,202
FGA15S125P ON Semiconductor	Transistors - IGBTs - Single IGBT 1250V 30A 136W TO3PN Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1250V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A Power - Max: 136W Switching Energy: - Input Type: Standard Gate Charge: 129nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock8,364
FGA180N30DTU ON Semiconductor	Transistors - IGBTs - Single IGBT 300V 180A 480W TO3P Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 180A Current - Collector Pulsed (Icm): 450A Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A Power - Max: 480W Switching Energy: - Input Type: Standard Gate Charge: 185nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 21ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock8,514
FGA180N33ATTU ON Semiconductor	Transistors - IGBTs - Single IGBT 330V 180A 390W TO3P Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): 180A Current - Collector Pulsed (Icm): 450A Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 40A Power - Max: 390W Switching Energy: - Input Type: Standard Gate Charge: 169nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock3,654
FGA20N120FTDTU ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A 298W TO3PN Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Power - Max: 298W Switching Energy: - Input Type: Standard Gate Charge: 137nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 447ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock24,240
FGA20S120M ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A 348W TO3PN Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A Power - Max: 348W Switching Energy: - Input Type: Standard Gate Charge: 208nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock6,210

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