Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2030/2164

Part Number	Description	In Stock
APT15GT60BRG Microsemi	Transistors - IGBTs - Single IGBT 600V 42A 184W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 184W Switching Energy: 150µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 6ns/105ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,186
APT15GT60KRG Microsemi	Transistors - IGBTs - Single IGBT 600V 42A 184W TO220 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 42A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 184W Switching Energy: 150µJ (on), 215µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 6ns/105ns Test Condition: 400V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]	In Stock3,492
APT200GN60B2G Microsemi	Transistors - IGBTs - Single IGBT 600V 283A 682W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 283A Current - Collector Pulsed (Icm): 600A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 200A Power - Max: 682W Switching Energy: 13mJ (on), 11mJ (off) Input Type: Standard Gate Charge: 1180nC Td (on/off) @ 25°C: 50ns/560ns Test Condition: 400V, 200A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: -	In Stock6,336
APT20GF120BRDQ1G Microsemi	Transistors - IGBTs - Single IGBT 1200V 36A 200W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Power - Max: 200W Switching Energy: 895µJ (on), 840µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 10ns/120ns Test Condition: 800V, 15A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,978
APT20GF120BRG Microsemi	Transistors - IGBTs - Single IGBT 1200V 32A 200W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A Power - Max: 200W Switching Energy: 2.7mJ Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 17ns/105ns Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,456
APT20GN60BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 600V 40A 136W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Power - Max: 136W Switching Energy: 230µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 9ns/140ns Test Condition: 400V, 20A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock8,172
APT20GN60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 40A 136W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Power - Max: 136W Switching Energy: 230µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 9ns/140ns Test Condition: 400V, 20A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock275
APT20GT60BRDQ1G Microsemi	Transistors - IGBTs - Single IGBT 600V 43A 174W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 174W Switching Energy: 215µJ (on), 245µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 8ns/80ns Test Condition: 400V, 20A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock5,580
APT20GT60BRG Microsemi	Transistors - IGBTs - Single IGBT 600V 43A 174W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 43A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 174W Switching Energy: 215µJ (on), 245µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 8ns/80ns Test Condition: 400V, 20A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,060
APT25GN120B2DQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 67A 272W TMAX Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 67A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 272W Switching Energy: 2.15µJ (off) Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	In Stock2,224
APT25GN120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 67A 272W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 67A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 272W Switching Energy: 2.15µJ (off) Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock7,920
APT25GN120SG Microsemi	Transistors - IGBTs - Single IGBT 1200V 67A 272W D3PAK Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 67A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 272W Switching Energy: - Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: 22ns/280ns Test Condition: 800V, 25A, 1Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3Pak	In Stock5,886
APT25GP120BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 1200V 69A 417W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 69A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 500µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 12ns/70ns Test Condition: 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock493
APT25GP120BG Microsemi	Transistors - IGBTs - Single IGBT 1200V 69A 417W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 69A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 500µJ (on), 438µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 12ns/70ns Test Condition: 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock4,968
APT25GP90BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 900V 72A 417W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 72A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 370µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 600V, 40A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock3,312
APT25GP90BG Microsemi	Transistors - IGBTs - Single IGBT 900V 72A 417W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 72A Current - Collector Pulsed (Icm): 110A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Power - Max: 417W Switching Energy: 370µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock8,244
APT25GR120B Microsemi	Transistors - IGBTs - Single IGBT 1200V 75A 521W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 521W Switching Energy: 742µJ (on), 427µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock16,584
APT25GR120BD15 Microsemi	Transistors - IGBTs - Single IGBT 1200V 75A 521W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 521W Switching Energy: 742µJ (on), 427µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,640
APT25GR120BSCD10 Microsemi	Transistors - IGBTs - Single IGBT 1200V 75A 521W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 521W Switching Energy: 434µJ (on), 466µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,472
APT25GR120S Microsemi	Transistors - IGBTs - Single IGBT 1200V 75A 521W D3PAK Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 521W Switching Energy: 742µJ (on), 427µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3Pak	In Stock8,748
APT25GR120SD15 Microsemi	Transistors - IGBTs - Single IGBT 1200V 75A 521W D3PAK Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 521W Switching Energy: 742µJ (on), 427µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3Pak	In Stock5,778
APT25GR120SSCD10 Microsemi	Transistors - IGBTs - Single IGBT 1200V 75A 521W D3PAK Manufacturer: Microsemi Corporation Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 521W Switching Energy: 434µJ (on), 466µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 600V, 25A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: D3Pak	In Stock4,248
APT25GT120BRDQ2G Microsemi	Transistors - IGBTs - Single IGBT 1200V 54A 347W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A Power - Max: 347W Switching Energy: 930µJ (on), 720µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 14ns/150ns Test Condition: 800V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock8,172
APT25GT120BRG Microsemi	Transistors - IGBTs - Single IGBT 1200V 54A 347W TO247 Manufacturer: Microsemi Corporation Series: Thunderbolt IGBT® IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 54A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A Power - Max: 347W Switching Energy: 930µJ (on), 720µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 14ns/150ns Test Condition: 800V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock7,290
APT27GA90BD15 Microsemi	Transistors - IGBTs - Single IGBT 900V 48A 223W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 900V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 79A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 14A Power - Max: 223W Switching Energy: 413µJ (on), 287µJ (off) Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 9ns/98ns Test Condition: 600V, 14A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock8,028
APT30GN60BDQ2G Microsemi	Transistors - IGBTs - Single IGBT 600V 63A 203W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 63A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 203W Switching Energy: 525µJ (on), 700µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 12ns/155ns Test Condition: 400V, 30A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock4,302
APT30GN60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 63A 203W TO247 Manufacturer: Microsemi Corporation Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 63A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 203W Switching Energy: 525µJ (on), 700µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: 12ns/155ns Test Condition: 400V, 30A, 4.3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock4,896
APT30GP60B2DLG Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 463W TMAX Manufacturer: Microsemi Corporation Series: - IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX™	In Stock8,604
APT30GP60BDQ1G Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 463W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock6,570
APT30GP60BG Microsemi	Transistors - IGBTs - Single IGBT 600V 100A 463W TO247 Manufacturer: Microsemi Corporation Series: POWER MOS 7® IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Power - Max: 463W Switching Energy: 260µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 13ns/55ns Test Condition: 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]	In Stock2,574

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