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APT68GA60B2D40

APT68GA60B2D40

For Reference Only

Part Number APT68GA60B2D40
PNEDA Part # APT68GA60B2D40
Description IGBT 600V 121A 520W TO-247
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 7,290
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT68GA60B2D40 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT68GA60B2D40
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT68GA60B2D40 Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)121A
Current - Collector Pulsed (Icm)202A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 40A
Power - Max520W
Switching Energy715µJ (on), 607µJ (off)
Input TypeStandard
Gate Charge198nC
Td (on/off) @ 25°C21ns/133ns
Test Condition400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device Package-

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Infineon Technologies

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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480V, 20A, 10Ohm, 15V

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