APT68GA60B2D40
For Reference Only
| Part Number | APT68GA60B2D40 |
| PNEDA Part # | APT68GA60B2D40 |
| Description | IGBT 600V 121A 520W TO-247 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,290 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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APT68GA60B2D40 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | APT68GA60B2D40 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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APT68GA60B2D40 Specifications
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 121A |
| Current - Collector Pulsed (Icm) | 202A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Power - Max | 520W |
| Switching Energy | 715µJ (on), 607µJ (off) |
| Input Type | Standard |
| Gate Charge | 198nC |
| Td (on/off) @ 25°C | 21ns/133ns |
| Test Condition | 400V, 40A, 4.7Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 90A Current - Collector Pulsed (Icm) 192A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 48A Power - Max 300W Switching Energy 1.7mJ (on), 1mJ (off) Input Type Standard Gate Charge 150nC Td (on/off) @ 25°C 70ns/140ns Test Condition 400V, 48A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
