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APT75GN60B2DQ3G

APT75GN60B2DQ3G

For Reference Only

Part Number APT75GN60B2DQ3G
PNEDA Part # APT75GN60B2DQ3G
Description IGBT 600V 155A 536W TO264
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT75GN60B2DQ3G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT75GN60B2DQ3G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT75GN60B2DQ3G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)155A
Current - Collector Pulsed (Icm)225A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 75A
Power - Max536W
Switching Energy2500µJ (on), 2140µJ (off)
Input TypeStandard
Gate Charge485nC
Td (on/off) @ 25°C47ns/385ns
Test Condition400V, 75A, 1Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device Package-

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

480V, 30A, 4.7Ohm, 15V

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

480V, 50A, 2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

11.7mJ (on), 6.9mJ (off)

Input Type

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Gate Charge

270nC

Td (on/off) @ 25°C

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Test Condition

1250V, 40A, 1Ohm, 15V

Reverse Recovery Time (trr)

210ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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Supplier Device Package

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Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

880W

Switching Energy

8.7mJ (on), 5.6mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

22ns/236ns

Test Condition

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Reverse Recovery Time (trr)

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