Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2111/2164

Part Number	Description	In Stock
NGTB40N65IHRTG ON Semiconductor	Transistors - IGBTs - Single 650V/40A RC IGBT Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Power - Max: 405W Switching Energy: 420µJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25°C: - Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock6,084
NGTB40N65IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT FIELD STOP 650V 80A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Power - Max: 405W Switching Energy: 420µJ (off) Input Type: Standard Gate Charge: 190nC Td (on/off) @ 25°C: - Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,740
NGTB45N60S1WG ON Semiconductor	Transistors - IGBTs - Single IGBT 45A 600V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 300W Switching Energy: 1.25mJ (on), 530µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 45A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock3,816
NGTB45N60S2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 45A 600V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 45A Power - Max: 300W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: -/151ns Test Condition: 400V, 45A, 10Ohm, 15V Reverse Recovery Time (trr): 498ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,848
NGTB45N60SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 45A TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A Power - Max: 250W Switching Energy: 550µJ (off) Input Type: Standard Gate Charge: 134nC Td (on/off) @ 25°C: 70ns/144ns Test Condition: 400V, 45A, 10Ohm, 15V Reverse Recovery Time (trr): 376ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock4,104
NGTB50N120FL2WAG ON Semiconductor	Transistors - IGBTs - Single IGBT FIELD STOP 1.2KV TO247-4 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Power - Max: 536W Switching Energy: 2.15mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 600V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 281ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	In Stock7,032
NGTB50N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 100A 535W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 535W Switching Energy: 4.4mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 311nC Td (on/off) @ 25°C: 118ns/282ns Test Condition: 600V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 256ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock851
NGTB50N60FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 417W Switching Energy: 1.5mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 100ns/237ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 94ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock1,222
NGTB50N60FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 223W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 116ns/292ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 85ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,328
NGTB50N60FWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 100A 223W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Power - Max: 223W Switching Energy: 1.1mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 117ns/285ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,382
NGTB50N60L2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A Power - Max: 500W Switching Energy: 800µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 110ns/270ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 67ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock428
NGTB50N60S1WG ON Semiconductor	Transistors - IGBTs - Single IGBT 50A 600V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 417W Switching Energy: 1.5mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 100ns/237ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 94ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock8,370
NGTB50N60SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Power - Max: - Switching Energy: 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 70ns/144ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 376ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock5,634
NGTB50N65FL2WAG ON Semiconductor	Transistors - IGBTs - Single IGBT FIELD STOP 650V TO247-4 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 417W Switching Energy: 420µJ (on), 550µJ (off) Input Type: Standard Gate Charge: 215nC Td (on/off) @ 25°C: 23ns/123ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 94ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	In Stock6,624
NGTB50N65FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 417W Switching Energy: 1.5mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 100ns/237ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 94ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock1,024
NGTB50N65S1WG ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH 650V 140A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A Power - Max: 300W Switching Energy: 1.25mJ (on), 530µJ (off) Input Type: Standard Gate Charge: 128nC Td (on/off) @ 25°C: 75ns/128ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,642
NGTB60N60SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 120A 298W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Power - Max: 298W Switching Energy: 1.41mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 173nC Td (on/off) @ 25°C: 87ns/180ns Test Condition: 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): 76ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock1,664
NGTB60N65FL2WG ON Semiconductor	Transistors - IGBTs - Single 650V/60A IGBT FSII Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Power - Max: 595W Switching Energy: 1.59mJ (on), 660µJ (off) Input Type: Standard Gate Charge: 318nC Td (on/off) @ 25°C: 117ns/265ns Test Condition: 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr): 96ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock5,533
NGTB75N60FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 75A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 595W Switching Energy: 1.5mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 110ns/270ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,492
NGTB75N60SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 75A 600V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 595W Switching Energy: 1.5mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 110ns/270ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock3,294
NGTB75N65FL2WAG ON Semiconductor	Transistors - IGBTs - Single IGBT FIELD STOP 650V TO247-4 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 200A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 536W Switching Energy: 610µJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 23ns/157ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	In Stock8,532
NGTB75N65FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 75A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: 595W Switching Energy: 1.5mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 110ns/270ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,108
NGTD13T65F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,132
NGTD13T65F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock4,410
NGTD14T65F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,646
NGTD14T65F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,094
NGTD17T65F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock6,426
NGTD17T65F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock7,722
NGTD20T120F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 1200V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,418
NGTD20T120F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 1200V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock6,750

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