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NGTB50N65FL2WG

NGTB50N65FL2WG

For Reference Only

Part Number NGTB50N65FL2WG
PNEDA Part # NGTB50N65FL2WG
Description IGBT 600V 50A TO247
Manufacturer ON Semiconductor
Unit Price
1 ---------- $71.3006
50 ---------- $67.9584
100 ---------- $64.6162
200 ---------- $61.2740
400 ---------- $58.4888
500 ---------- $55.7036
In Stock 1,024
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB50N65FL2WG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB50N65FL2WG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB50N65FL2WG, NGTB50N65FL2WG Datasheet (Total Pages: 11, Size: 211.38 KB)
PDFNGTB50N65FL2WG Datasheet Cover
NGTB50N65FL2WG Datasheet Page 2 NGTB50N65FL2WG Datasheet Page 3 NGTB50N65FL2WG Datasheet Page 4 NGTB50N65FL2WG Datasheet Page 5 NGTB50N65FL2WG Datasheet Page 6 NGTB50N65FL2WG Datasheet Page 7 NGTB50N65FL2WG Datasheet Page 8 NGTB50N65FL2WG Datasheet Page 9 NGTB50N65FL2WG Datasheet Page 10 NGTB50N65FL2WG Datasheet Page 11

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NGTB50N65FL2WG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A
Power - Max417W
Switching Energy1.5mJ (on), 460µJ (off)
Input TypeStandard
Gate Charge220nC
Td (on/off) @ 25°C100ns/237ns
Test Condition400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)94ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

800A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Test Condition

960V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

310µJ (on), 1.14mJ (off)

Input Type

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Gate Charge

166nC

Td (on/off) @ 25°C

100ns/390ns

Test Condition

300V, 30A, 30Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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IRGS4B60KD1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

11A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

IXYS

Series

GenX4™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

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Power - Max

455W

Switching Energy

1.4mJ (on), 560µJ (off)

Input Type

Standard

Gate Charge

77nC

Td (on/off) @ 25°C

28ns/144ns

Test Condition

400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXXH)

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 50A

Power - Max

500W

Switching Energy

1mJ (off)

Input Type

Standard

Gate Charge

170nC

Td (on/off) @ 25°C

28ns/160ns

Test Condition

400V, 50A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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