NGTB50N60L2WG
For Reference Only
| Part Number | NGTB50N60L2WG | ||||||||||||||||||
| PNEDA Part # | NGTB50N60L2WG | ||||||||||||||||||
| Description | IGBT 600V 50A TO247 | ||||||||||||||||||
| Manufacturer | ON Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 428 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTB50N60L2WG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTB50N60L2WG |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTB50N60L2WG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Power - Max | 500W |
| Switching Energy | 800µJ (on), 600µJ (off) |
| Input Type | Standard |
| Gate Charge | 310nC |
| Td (on/off) @ 25°C | 110ns/270ns |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 67ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 24A Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 8A Power - Max 99W Switching Energy 70µJ (on), 145µJ (off) Input Type Standard Gate Charge 19nC Td (on/off) @ 25°C 30ns/95ns Test Condition 400V, 8A, 47Ohm, 15V Reverse Recovery Time (trr) 60ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Infineon Technologies Series TrenchStop® IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 12A Current - Collector Pulsed (Icm) 18A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A Power - Max 100W Switching Energy 330µJ Input Type Standard Gate Charge 48nC Td (on/off) @ 25°C 12ns/127ns Test Condition 400V, 6A, 23Ohm, 15V Reverse Recovery Time (trr) 68ns Operating Temperature - Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package PG-TO251-3 |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 30A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 12A Power - Max 125W Switching Energy 258µJ (off) Input Type Standard Gate Charge 54nC Td (on/off) @ 25°C 25ns/96ns Test Condition 480V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) 80ns Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer Infineon Technologies Series TrenchStop® IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 74A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A Power - Max 255W Switching Energy 360µJ (on), 100µJ (off) Input Type Standard Gate Charge 95nC Td (on/off) @ 25°C 19ns/160ns Test Condition 400V, 20A, 15Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PG-TO247-3 |
