Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
NGTB30N120IHSWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Power - Max: 192W Switching Energy: 1mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: -/210ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,382
NGTB30N120L2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 60A 534W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 534W Switching Energy: 4.4mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 116ns/285ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 450ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,384
NGTB30N120LWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 560W Switching Energy: 4.4mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 136ns/360ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,086
NGTB30N135IHR1WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1350V 30A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A Power - Max: 394W Switching Energy: 630µA (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: -/200ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock5,346
NGTB30N135IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1350V 60A 394W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 30A Power - Max: 394W Switching Energy: 850µJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/250ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,576
NGTB30N60FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 60A 250W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 250W Switching Energy: 700µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 83ns/170ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,858
NGTB30N60FWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 60A 167W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 167W Switching Energy: 650µJ (on), 650µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 81ns/190ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,968
NGTB30N60IHLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 30A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 250W Switching Energy: 280µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 400ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,436
NGTB30N60L2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 30A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A Power - Max: 225W Switching Energy: 310µJ (on), 1.14mJ (off) Input Type: Standard Gate Charge: 166nC Td (on/off) @ 25°C: 100ns/390ns Test Condition: 300V, 30A, 30Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,504
NGTB30N60SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 60A 189W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 189W Switching Energy: 750µJ (on), 540µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 57ns/109ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock2,880
NGTB30N65IHL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 70A 300W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 300W Switching Energy: 200µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: -/145ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 430ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock2,862
NGTB35N60FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 70A 300W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 300W Switching Energy: 840µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 35A, 10Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,392
NGTB35N65FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 650V 70A 300W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 300W Switching Energy: 840µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 35A, 10Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,910
NGTB40N120FL2WAG ON Semiconductor	Transistors - IGBTs - Single IGBT FIELD STOP 1200V TO247-4 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 536W Switching Energy: 1.7mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 30ns/145ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	In Stock7,104
NGTB40N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 80A 535W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 535W Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock45,446
NGTB40N120FL3WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 160A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 454W Switching Energy: 1.6mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 212nC Td (on/off) @ 25°C: 18ns/145ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 136ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock35,239
NGTB40N120FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Power - Max: 260W Switching Energy: 2.6mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 415nC Td (on/off) @ 25°C: 130ns/385ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,146
NGTB40N120IHLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 320A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Power - Max: 260W Switching Energy: 1.4mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: -/360ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,856
NGTB40N120IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 80A 384W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 40A Power - Max: 384W Switching Energy: 950µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: -/230ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,200
NGTB40N120L3WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 160A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 454W Switching Energy: 1.5mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 18ns/150ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 86ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,193
NGTB40N120LWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 320A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Power - Max: 260W Switching Energy: 5.5mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 140ns/360ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,334
NGTB40N120S3WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1.2KV 40A TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A Power - Max: 454W Switching Energy: 2.2mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 212nC Td (on/off) @ 25°C: 12ns/145ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 163ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock15,528
NGTB40N120SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 40A 1200V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 535W Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock2,617
NGTB40N135IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1350V 80A 394W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 394W Switching Energy: 1.3mJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/250ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,156
NGTB40N60FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 80A 366W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 366W Switching Energy: 970µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 84ns/177ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,726
NGTB40N60FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 80A 257W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 257W Switching Energy: 890µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 171nC Td (on/off) @ 25°C: 85ns/174ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 77ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,486
NGTB40N60IHLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 40A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 250W Switching Energy: 400µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 400ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,786
NGTB40N60L2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 80A 417W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A Power - Max: 417W Switching Energy: 1.17mJ (on), 280µJ (off) Input Type: Standard Gate Charge: 228nC Td (on/off) @ 25°C: 98ns/213ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 73ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,966
NGTB40N65FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 650V 80A 366W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 366W Switching Energy: 970µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 84ns/177ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,514
NGTB40N65IHL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 650V 40A TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Power - Max: 300W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: -/140ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 465ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock8,190

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