Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 2109/2164

Part Number	Description	In Stock
NGTB10N60R2DT4G ON Semiconductor	Transistors - IGBTs - Single IGBT 10A 600V DPAK Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 72W Switching Energy: 412µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 53nC Td (on/off) @ 25°C: 48ns/120ns Test Condition: 300V, 10A, 30Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	In Stock3,562
NGTB15N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 15A SOLAR/UPS TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 294W Switching Energy: 1.2mJ (on), 370µJ (off) Input Type: Standard Gate Charge: 109nC Td (on/off) @ 25°C: 64ns/132ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 110ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock4,827
NGTB15N120FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 15A TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 156W Switching Energy: 1.17mJ (on), 550µJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 72ns/168ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 166ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock6,816
NGTB15N120IHLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A 156W TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 156W Switching Energy: 560µJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: -/165ns Test Condition: 600V, 15A, 15Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,616
NGTB15N120IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 15A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: 333W Switching Energy: 340µJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: -/170ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,838
NGTB15N120IHTG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 15A BIPOLAR TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,636
NGTB15N120IHWG ON Semiconductor	Transistors - IGBTs - Single IGBT 15A 1200V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A Power - Max: 278W Switching Energy: 360µJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: -/130ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,902
NGTB15N120LWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A 156W TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 229W Switching Energy: 2.1mJ (on), 560µJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 72ns/165ns Test Condition: 600V, 15A, 15Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,734
NGTB15N135IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1350V 15A TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 15A Power - Max: 357W Switching Energy: 420µJ (off) Input Type: Standard Gate Charge: 156nC Td (on/off) @ 25°C: -/170ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,474
NGTB15N60EG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 30A 117W TO220-3 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 15A Power - Max: 117W Switching Energy: 900µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 78ns/130ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): 270ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock6,318
NGTB15N60R2FG ON Semiconductor	Transistors - IGBTs - Single IGBT 15A 600V TO220-3 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Power - Max: 54W Switching Energy: 550µJ (on), 220µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 70ns/190ns Test Condition: 300V, 15A, 30Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3FS	In Stock104,631
NGTB15N60S1EG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 30A 117W TO220-3 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Power - Max: 117W Switching Energy: 550µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 65ns/170ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): 270ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock7,488
NGTB20N120IHLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A 192W TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 192W Switching Energy: 700µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: -/235ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock2,322
NGTB20N120IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A 384W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A Power - Max: 384W Switching Energy: 450µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: -/235ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock12,207
NGTB20N120IHSWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 20A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Power - Max: 156W Switching Energy: 650µJ (off) Input Type: Standard Gate Charge: 155nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,496
NGTB20N120IHTG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 20A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,780
NGTB20N120IHWG ON Semiconductor	Transistors - IGBTs - Single IGBT 20A 1200V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A Power - Max: 341W Switching Energy: 480µJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: -/170ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock2,916
NGTB20N120LWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A 192W TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 192W Switching Energy: 3.1mJ (on), 700µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 86ns/235ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,770
NGTB20N135IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1350V 40A 394W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A Power - Max: 394W Switching Energy: 600µJ (off) Input Type: Standard Gate Charge: 234nC Td (on/off) @ 25°C: -/245ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock428
NGTB20N60L2TF1G ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 20A TO3PF Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A Power - Max: 64W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 60ns/193ns Test Condition: 300V, 20A, 30Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PF-3	In Stock5,004
NGTB25N120FL2WAG ON Semiconductor	Transistors - IGBTs - Single IGBT FIELD STOP 1.2KV TO247-4 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 990µJ (on), 660µJ (off) Input Type: Standard Gate Charge: 181nC Td (on/off) @ 25°C: 17ns/113ns Test Condition: 600V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 136ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: TO-247-4L	In Stock2,952
NGTB25N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 25A TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 154ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,440
NGTB25N120FL3WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 100A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 349W Switching Energy: 1mJ (on), 700µJ (off) Input Type: Standard Gate Charge: 136nC Td (on/off) @ 25°C: 15ns/109ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 114ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock7,596
NGTB25N120FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 25A TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: 192W Switching Energy: 1.5mJ (on), 950µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 91ns/228ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,045
NGTB25N120IHLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 50A 192W TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Power - Max: 192W Switching Energy: 800µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: -/235ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,740
NGTB25N120LWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 50A 192W TO247-3 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Power - Max: 192W Switching Energy: 3.4mJ (on), 800µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 89ns/235ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock5,580
NGTB25N120SWG ON Semiconductor	Transistors - IGBTs - Single IGBT 25A 1200V TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 154ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock8,352
NGTB30N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 60A 452W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 452W Switching Energy: 2.6mJ (on), 700µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 98ns/210ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 240ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock8,334
NGTB30N120IHLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 30A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 320A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 260W Switching Energy: 1mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: -/360ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,644
NGTB30N120IHRWG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 60A 384W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 384W Switching Energy: 700µJ (off) Input Type: Standard Gate Charge: 225nC Td (on/off) @ 25°C: -/230ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,708

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