Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 2112/2164

Part Number	Description	In Stock
NGTD21T65F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,688
NGTD21T65F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock2,646
NGTD23T120F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 1200V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock8,604
NGTD23T120F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 1200V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock5,868
NGTD28T65F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock3,672
NGTD28T65F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 650V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock6,696
NGTD30T120F2SWK ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 1200V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock4,194
NGTD30T120F2WP ON Semiconductor	Transistors - IGBTs - Single IGBT TRENCH FIELD STOP 1200V DIE Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock4,626
NGTG12N60TF1G ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 24A 54W TO-3PF Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 88A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 12A Power - Max: 54W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 55ns/200ns Test Condition: 300V, 15A, 30Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: -	In Stock7,488
NGTG15N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 15A TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 294W Switching Energy: 1.2mJ (on), 370µJ (off) Input Type: Standard Gate Charge: 109nC Td (on/off) @ 25°C: 64ns/128ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock3,816
NGTG15N60S1EG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 30A 117W TO220-3 Manufacturer: ON Semiconductor Series: - IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Power - Max: 117W Switching Energy: 550µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 88nC Td (on/off) @ 25°C: 65ns/170ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	In Stock19,746
NGTG20N60L2TF1G ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 40A 64W TO-3PF Manufacturer: ON Semiconductor Series: - IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A Power - Max: 64W Switching Energy: - Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 60ns/193ns Test Condition: 300V, 20A, 30Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: -	In Stock7,404
NGTG25N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 25A TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 385W Switching Energy: 1.95mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 178nC Td (on/off) @ 25°C: 87ns/179ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock5,544
NGTG30N60FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 60A 250W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 250W Switching Energy: 700µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 83ns/170ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,528
NGTG30N60FWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 60A 167W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 167W Switching Energy: 650µJ (on), 650µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 81ns/190ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock4,698
NGTG35N65FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 650V 60A 167W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 300W Switching Energy: 840µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 72ns/132ns Test Condition: 400V, 35A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,426
NGTG40N120FL2WG ON Semiconductor	Transistors - IGBTs - Single IGBT 1200V 40A TO-247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 535W Switching Energy: 3.4mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 313nC Td (on/off) @ 25°C: 116ns/286ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock6,174
NGTG50N60FLWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 50A TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 223W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 116ns/292ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock3,564
NGTG50N60FWG ON Semiconductor	Transistors - IGBTs - Single IGBT 600V 100A 223W TO247 Manufacturer: ON Semiconductor Series: - IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Power - Max: 223W Switching Energy: 1.1mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 117ns/285ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock7,056
RGC80TSX8RGC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1800V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A Power - Max: 535W Switching Energy: 1.85mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 468nC Td (on/off) @ 25°C: 80ns/565ns Test Condition: 600V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock7,056
RGCL60TK60DGC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 54W Switching Energy: 770µJ (on), 1.11mJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 44ns/186ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,412
RGCL60TK60GC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 54W Switching Energy: 770µJ (on), 1.11mJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 44ns/186ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,298
RGCL60TS60DGC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 111W Switching Energy: 770µJ (on), 1.11mJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 44ns/186ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock8,928
RGCL60TS60GC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 111W Switching Energy: 770µJ (on), 1.11mJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 44ns/186ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock8,880
RGCL80TK60DGC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 57W Switching Energy: 1.11mJ (on), 1.68mJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 53ns/227ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock8,592
RGCL80TK60GC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 57W Switching Energy: 1.11mJ (on), 1.68mJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 53ns/227ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock9,552
RGCL80TS60DGC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 148W Switching Energy: 1.11mJ (on), 1.68mJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 53ns/227ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 58ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock10,248
RGCL80TS60GC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: - IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 148W Switching Energy: 1.11mJ (on), 1.68mJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 53ns/227ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock8,460
RGPR10BM40FHTL Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 460V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Power - Max: 107W Switching Energy: - Input Type: Standard Gate Charge: 14nC Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 75°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	In Stock21,348
RGPR20NS43HRTL Rohm Semiconductor	Transistors - IGBTs - Single 430V 20A IGNITION IGBT Manufacturer: Rohm Semiconductor Series: Automotive, AEC-Q101 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 460V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Power - Max: 107W Switching Energy: - Input Type: Standard Gate Charge: 14nC Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS	In Stock5,094

«
‹
1
...
2109
2110
2111
2112 (current)
2113
2114
2115
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message