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NGTB50N120FL2WAG

NGTB50N120FL2WAG

For Reference Only

Part Number NGTB50N120FL2WAG
PNEDA Part # NGTB50N120FL2WAG
Description IGBT FIELD STOP 1.2KV TO247-4
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB50N120FL2WAG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB50N120FL2WAG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB50N120FL2WAG, NGTB50N120FL2WAG Datasheet (Total Pages: 10, Size: 156.95 KB)
PDFNGTB50N120FL2WAG Datasheet Cover
NGTB50N120FL2WAG Datasheet Page 2 NGTB50N120FL2WAG Datasheet Page 3 NGTB50N120FL2WAG Datasheet Page 4 NGTB50N120FL2WAG Datasheet Page 5 NGTB50N120FL2WAG Datasheet Page 6 NGTB50N120FL2WAG Datasheet Page 7 NGTB50N120FL2WAG Datasheet Page 8 NGTB50N120FL2WAG Datasheet Page 9 NGTB50N120FL2WAG Datasheet Page 10

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NGTB50N120FL2WAG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)200A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 50A
Power - Max536W
Switching Energy2.15mJ (on), 1.4mJ (off)
Input TypeStandard
Gate Charge313nC
Td (on/off) @ 25°C28ns/150ns
Test Condition600V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)281ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-4
Supplier Device PackageTO-247-4L

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Test Condition

400V, 40A, 7.9Ohm, 15V

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STMicroelectronics

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

300V, 10A, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Package / Case

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STMicroelectronics

Manufacturer

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

90µJ (on), 450µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 15A, 12Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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