NGTD13T65F2WP
For Reference Only
| Part Number | NGTD13T65F2WP |
| PNEDA Part # | NGTD13T65F2WP |
| Description | IGBT TRENCH FIELD STOP 650V DIE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,410 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Sep 23 - Sep 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTD13T65F2WP Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTD13T65F2WP |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTD13T65F2WP Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 11A Current - Collector Pulsed (Icm) 22A Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A Power - Max 60W Switching Energy 450µJ (on), 440µJ (off) Input Type Standard Gate Charge 28nC Td (on/off) @ 25°C 23ns/93ns Test Condition 960V, 5A, 50Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package TO-262 |
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