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NGTB50N60FL2WG

NGTB50N60FL2WG

For Reference Only

Part Number NGTB50N60FL2WG
PNEDA Part # NGTB50N60FL2WG
Description IGBT 600V 50A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 1,222
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB50N60FL2WG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB50N60FL2WG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB50N60FL2WG, NGTB50N60FL2WG Datasheet (Total Pages: 11, Size: 236.92 KB)
PDFNGTB50N60FL2WG Datasheet Cover
NGTB50N60FL2WG Datasheet Page 2 NGTB50N60FL2WG Datasheet Page 3 NGTB50N60FL2WG Datasheet Page 4 NGTB50N60FL2WG Datasheet Page 5 NGTB50N60FL2WG Datasheet Page 6 NGTB50N60FL2WG Datasheet Page 7 NGTB50N60FL2WG Datasheet Page 8 NGTB50N60FL2WG Datasheet Page 9 NGTB50N60FL2WG Datasheet Page 10 NGTB50N60FL2WG Datasheet Page 11

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NGTB50N60FL2WG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)100A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 50A
Power - Max417W
Switching Energy1.5mJ (on), 460µJ (off)
Input TypeStandard
Gate Charge220nC
Td (on/off) @ 25°C100ns/237ns
Test Condition400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)94ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Mounting Type

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Alpha & Omega Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

400V, 10A, 30Ohm, 15V

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Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

19nC

Td (on/off) @ 25°C

32ns/85ns

Test Condition

300V, 12A, 5Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

150°C (TJ)

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Package / Case

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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