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NGTB30N65IHL2WG

NGTB30N65IHL2WG

For Reference Only

Part Number NGTB30N65IHL2WG
PNEDA Part # NGTB30N65IHL2WG
Description IGBT 600V 70A 300W TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB30N65IHL2WG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB30N65IHL2WG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB30N65IHL2WG, NGTB30N65IHL2WG Datasheet (Total Pages: 7, Size: 91.45 KB)
PDFNGTB30N65IHL2WG Datasheet Cover
NGTB30N65IHL2WG Datasheet Page 2 NGTB30N65IHL2WG Datasheet Page 3 NGTB30N65IHL2WG Datasheet Page 4 NGTB30N65IHL2WG Datasheet Page 5 NGTB30N65IHL2WG Datasheet Page 6 NGTB30N65IHL2WG Datasheet Page 7

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NGTB30N65IHL2WG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 30A
Power - Max300W
Switching Energy200µJ (off)
Input TypeStandard
Gate Charge135nC
Td (on/off) @ 25°C-/145ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)430ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

400W

Switching Energy

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Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

480V, 40A, 5Ohm, 15V

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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APT20GT60BRDQ1G

Microsemi

Manufacturer

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Series

Thunderbolt IGBT®

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

43A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

400V, 20A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

192A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 48A

Power - Max

300W

Switching Energy

1.7mJ (on), 1mJ (off)

Input Type

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Gate Charge

150nC

Td (on/off) @ 25°C

70ns/140ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

240A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 50A

Power - Max

750W

Switching Energy

3mJ (on), 1mJ (off)

Input Type

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Gate Charge

142nC

Td (on/off) @ 25°C

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Test Condition

600V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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