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NGTB40N120IHLWG

NGTB40N120IHLWG

For Reference Only

Part Number NGTB40N120IHLWG
PNEDA Part # NGTB40N120IHLWG
Description IGBT 1200V 40A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB40N120IHLWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB40N120IHLWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB40N120IHLWG, NGTB40N120IHLWG Datasheet (Total Pages: 8, Size: 156.59 KB)
PDFNGTB40N120IHLWG Datasheet Cover
NGTB40N120IHLWG Datasheet Page 2 NGTB40N120IHLWG Datasheet Page 3 NGTB40N120IHLWG Datasheet Page 4 NGTB40N120IHLWG Datasheet Page 5 NGTB40N120IHLWG Datasheet Page 6 NGTB40N120IHLWG Datasheet Page 7 NGTB40N120IHLWG Datasheet Page 8

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NGTB40N120IHLWG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)320A
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 40A
Power - Max260W
Switching Energy1.4mJ (off)
Input TypeStandard
Gate Charge420nC
Td (on/off) @ 25°C-/360ns
Test Condition600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

800V, 35A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247AB

Manufacturer

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Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 30A

Power - Max

300W

Switching Energy

3.47mJ (on), 2.16mJ (off)

Input Type

Standard

Gate Charge

87nC

Td (on/off) @ 25°C

16ns/127ns

Test Condition

960V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

Manufacturer

IXYS

Series

XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

2500V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

380A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

1250V, 40A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

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RJH60D7BDPQ-E0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 50A

Power - Max

300W

Switching Energy

700µJ (on), 1.4mJ (off)

Input Type

Standard

Gate Charge

125nC

Td (on/off) @ 25°C

60ns/180ns

Test Condition

300V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

43A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 15A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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