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NGTB30N120IHSWG

NGTB30N120IHSWG

For Reference Only

Part Number NGTB30N120IHSWG
PNEDA Part # NGTB30N120IHSWG
Description IGBT 1200V 30A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,382
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB30N120IHSWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB30N120IHSWG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB30N120IHSWG, NGTB30N120IHSWG Datasheet (Total Pages: 8, Size: 167.77 KB)
PDFNGTB30N120IHSWG Datasheet Cover
NGTB30N120IHSWG Datasheet Page 2 NGTB30N120IHSWG Datasheet Page 3 NGTB30N120IHSWG Datasheet Page 4 NGTB30N120IHSWG Datasheet Page 5 NGTB30N120IHSWG Datasheet Page 6 NGTB30N120IHSWG Datasheet Page 7 NGTB30N120IHSWG Datasheet Page 8

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NGTB30N120IHSWG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
Power - Max192W
Switching Energy1mJ (off)
Input TypeStandard
Gate Charge220nC
Td (on/off) @ 25°C-/210ns
Test Condition600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Td (on/off) @ 25°C

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Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

153ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

400V, 15A, 23Ohm, 15V

Reverse Recovery Time (trr)

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