NGTB30N60L2WG
For Reference Only
| Part Number | NGTB30N60L2WG |
| PNEDA Part # | NGTB30N60L2WG |
| Description | IGBT 600V 30A TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,504 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTB30N60L2WG Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTB30N60L2WG |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGTB30N60L2WG Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Current - Collector Pulsed (Icm) | 60A |
| Vce(on) (Max) @ Vge, Ic | 1.6V @ 15V, 30A |
| Power - Max | 225W |
| Switching Energy | 310µJ (on), 1.14mJ (off) |
| Input Type | Standard |
| Gate Charge | 166nC |
| Td (on/off) @ 25°C | 100ns/390ns |
| Test Condition | 300V, 30A, 30Ohm, 15V |
| Reverse Recovery Time (trr) | 70ns |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 72A Current - Collector Pulsed (Icm) 110A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A Power - Max 417W Switching Energy 370µJ (off) Input Type Standard Gate Charge 110nC Td (on/off) @ 25°C 13ns/55ns Test Condition 600V, 40A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
