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NGTB30N135IHR1WG

NGTB30N135IHR1WG

For Reference Only

Part Number NGTB30N135IHR1WG
PNEDA Part # NGTB30N135IHR1WG
Description IGBT 1350V 30A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NGTB30N135IHR1WG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNGTB30N135IHR1WG
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
NGTB30N135IHR1WG, NGTB30N135IHR1WG Datasheet (Total Pages: 9, Size: 131.44 KB)
PDFNGTB30N135IHR1WG Datasheet Cover
NGTB30N135IHR1WG Datasheet Page 2 NGTB30N135IHR1WG Datasheet Page 3 NGTB30N135IHR1WG Datasheet Page 4 NGTB30N135IHR1WG Datasheet Page 5 NGTB30N135IHR1WG Datasheet Page 6 NGTB30N135IHR1WG Datasheet Page 7 NGTB30N135IHR1WG Datasheet Page 8 NGTB30N135IHR1WG Datasheet Page 9

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NGTB30N135IHR1WG Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1350V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 30A
Power - Max394W
Switching Energy630µA (off)
Input TypeStandard
Gate Charge220nC
Td (on/off) @ 25°C-/200ns
Test Condition600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

57nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 10A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

65nC

Td (on/off) @ 25°C

15ns/170ns

Test Condition

600V, 10A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

380A

Current - Collector Pulsed (Icm)

900A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 100A

Power - Max

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Switching Energy

2.85mJ (on), 4.4mJ (off)

Input Type

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Gate Charge

315nC

Td (on/off) @ 25°C

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Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IKP40N65H5XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

74A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

255W

Switching Energy

390µJ (on), 120µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

22ns/165ns

Test Condition

400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

62ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

PG-TO220-3

IXBT24N170

IXYS

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

230A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 24A

Power - Max

250W

Switching Energy

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Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

1.06µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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